General Integration of Vertical Nanowire Arrays with Silicon for Highly Parallel Electronic Device Applications

Abstract

Near-term commercialization of nanowire-based devices is possible through an integrative approach with existing semiconductor platforms. Research-based single nanowire devices suffer from issues related to size dependence and variability; hence, the use of a large number of nanowires in parallel is a prerequisite for real-world devices to scale output and provide statistical averaging of properties. Parallel integration is most directly achieved through electrical contacting of nanowire arrays in the as-grown vertical configuration. Here, we demonstrate a one-step process that overcomes several technological barriers simultaneously, allowing the seamless electrical integration of ZnO nanowire arrays with industry standard silicon substrates. Our seamless integration process is based on the deposition of a metal contact layer on silicon and subsequent CVD nanowire growth. Combined SEM, XRD, and TEM measurements show compositional and structural changes to each metal contact layer candidate during the high-temperature growth process, directly influencing the ZnO base growth and controlling the properties and dimensions of the resulting nanowire arrays. Findings were correlated to nanoscale multiprobe electrical measurements of individual nanowires in the vertical device configuration to demonstrate the effects of each metal layer on conduction through the nanowires and the metal–semiconductor interface. The refractory metal molybdenum gave highly aligned, dense nanowire growth and formed a low-resistance ohmic contact to the base of these arrays offering a simple and scalable process-ready solution for integrating nanowires with the industry standard silicon platform.

Memristive devices based on single ZnO nanowires—from material synthesis to neuromorphic functionalities

“…Results evidenced that NWs with similar morphologies were synthetized in case of pre-seeded and bare Pt substrates, as reported in figures 3(a) and (b), respectively, clearly showing that the seeding procedure can be safely avoided without influencing the resulting NW morphology. Similarly, other metals including Ti, Mo and W were reported as substrates for initiating the growth of ZnO NWs [36]. Interestingly, the here reported growth mechanism allows selective growth of ZnO NWs by pre-patterning the Pt substrate since nucleation is suppressed elsewhere.…”

“…A wide range of resistive switching devices based on single ZnO NWs [10, [21][22][23][24][25][26][27][28][29] and NW arrays [30][31][32][33] have been reported, where NWs were synthetized by different growth techniques. Among growth techniques, ZnO nanostructures have been reported to be synthetized by chemical vapor deposition (CVD) with a wide range of setup configurations and process parameters, as well as different growth mechanism such as vapor-liquid-solid (VLS) and vapor-solid (VS) [34][35][36][37][38][39][40][41][42][43][44]. In case of VLS mechanism, small liquid metal clusters have to be formed on the growing substrate to act as catalysts for the incorporation of precursor atoms with consequent growth of nanostructures by precipitation.…”