Generalized model for refractive index of III-V semiconductors

Abstract

We present an empirical model to calculate the refractive index of III-V semiconductors as a function of the band-gap and photon energies, by fitting the Wemple- DiDomenico model to the refractive index data of binary compounds.

Dielectric Resonant Metaphotonics

“…Another recently suggested approach is based on an empirical model to calculate the refractive index of III−V semiconductors as a function of the band gap and photon energies. 70 Importantly, nanophotonics is attractive for enhancing the generation of single photons for further processing and coupling to optical circuitry, and it is considered as one of the key enabling technologies for quantum and communication systems. The conventional approach to realizing single-photon sources is to employ a spontaneous emission from two-level elements emitting one photon at a time, the so-called quantum emitters, that can be selected from various structures including quantum dots, dye molecules, and color centers in crystals.…”

“…It was shown that, for materials with almost flat bands, such as rhenium dichalcogenides, the refractive index can be dramatically increased up to values more than 5 for the photon energies around 1 eV. Another recently suggested approach is based on an empirical model to calculate the refractive index of III–V semiconductors as a function of the band gap and photon energies …”