Generalized model of recombination in inhomogeneous semiconductor structures

Defect formation in epitaxial GaP junctions under heat treatment

“…where U c is the contact potential and d is the spacecharge width [10]. We shall use the segment to calculate the deep-center concentration N deep , process-induced increase in which causes the tunneling component of current to grow.…”

“…As is usual in tunneling calculations, we consider elastic tunneling and assume that the tunneling rate w is given by (2) where ν is the incident rate and is the localization radius (13.5 and 33.5 Å for holes and electrons, respectively, in GaP), the incident rate being equal to the characteristic phonon frequency and close to the acoustic-phonon energy ( = 12 meV) [10].…”

“…According to the recombination model, tunneling is manifested in the recombination-channel saturation in a current-voltage characteristic, due to a limited tunneling-channel capacity [10]. The current density for this segment is written…”

“…Previous research on inhomogeneous semiconductor materials and structures has shown that recombination in them essentially involves tunneling [10,11].…”

“…The materials examined include compensated [6] and noncrystalline semiconductors [7]. The recombination model of the present study was first described in [8,9], and its final version was presented in [10]. It has been validated for a wide range of structures with increasing inhomogeneity [11].…”