Generating terahertz signals in 65nm CMOS with negative-resistance resonator boosting and selective harmonic suppression

Gu, Qun Jane; Xu, Zhiwei; Jian, Heng-Yu; Xu, Xiaoxiao; Chang, Mau-Chung Frank; Liu, Wei; Fetterman, Harold R.

doi:10.1109/vlsic.2010.5560335

Cited by 13 publications

(9 citation statements)

References 3 publications

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“…f MAX is more closely correlated to the circuit highest operating frequency than f T . For example, there are a few oscillators [5,18], which demonstrate fundamental oscillation frequency higher than device f T , while still lower than f MAX . It suggests that device f MAX is indeed the operating frequency limit for circuits and needs to be maximized by minimizing the layout dependent parasitics, which is the focus of this paper.…”

Section: Mosfet Design Optimizationmentioning

confidence: 99%

“…Therefore, new circuit design techniques are needed to break through device speed limitations. In the oscillator design, we proposed a new oscillator architecture which utilizes a frequency selective negative resistance (FSNR) tank in parallel with a conventional tank to boost both operation frequency and loop gain to achieve a high fundamental oscillation frequency [5]. Figure 4(a) shows the circuit schematic, with the chip photo shown in Fig.…”

Section: Terahertz Vcomentioning

confidence: 99%

“…The oscillator output, mixed with a high order harmonic of an external LO, is down-converted to an IF, which is then fed into a low noise amplifier and finally to a spectrum analyzer. By shifting the external LO and measuring the corresponding IF signal shifting frequency, the used LO harmonic order for down-conversion can be derived, which leads to the measured VCO output frequency [5]. As shown in Fig.…”

Section: Terahertz Vcomentioning

confidence: 99%

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Physical design optimization of MOSFETs for millimeter wave and sub-millimeter wave circuits

Liu

2015

Analog Integr Circ Sig Process

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Deep-scaled CMOS technologies have provided ultra-high speed devices and enabled the possibility to achieve integrated millimeter wave and sub-millimeter wave systemon-a-chip (SoC). However, the drawbacks and constraints of deep-scaled technologies require not only creative circuit design ideas but also accurate active device models and optimum physical design. The paper presents a systematic design approach to optimize active device physical design and build the corresponding model, which is exemplified through two layout examples. With the optimum active device physical design and new circuit design ideas, we have successfully demonstrated several key circuits in mm-wave/sub-mm-wave frequency ranges: a 450 GHz voltage controlled oscillator, a 200 GHz frequency divider, and a 200 GHz amplifier all in 65 nm bulk CMOS technologies. The availability of these key building blocks would benefit the realization of mm-wave/sub-mmwave SoCs in the future.

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Section: Mosfet Design Optimizationmentioning

confidence: 99%

Section: Terahertz Vcomentioning

confidence: 99%

Section: Terahertz Vcomentioning

confidence: 99%

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Physical design optimization of MOSFETs for millimeter wave and sub-millimeter wave circuits

Liu

2015

Analog Integr Circ Sig Process

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“…Heterostructure bipolar transistos (HBTs), high electron mobility transistors (HEMTs), and Si C-MOS transistors are also studied intensively [14,15,16,17,18,19,20,21,22,23,24]. The maximum oscillation frequency, i. e., the frequency at which the power gain = 0 dB, of the InP-based HEMT exceeded 1 THz [14].…”

Section: Introductionmentioning

confidence: 99%

“…Sub-THz oscillation and amplification were reported in MMICs with InPbased HEMTs and HBTs [18,19,20,21]. Oscillators with Si C-MOS were also studied [22,23,24]. Devices based on Bloch oscillation, plasma effect, and velocity modulation are also being studied [25,26,27,28].…”

Section: Introductionmentioning

confidence: 99%

Terahertz oscillators using electron devices - an approach with Resonant tunneling diodes

Asada

Suzuki

2011

IEICE Electron. Express

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Abstract:Resonant tunneling diodes (RTDs) have the potential for compact and coherent terahertz (THz) sources operating at room temperature. In this paper, recent results of THz oscillators with RTDs are described. A fundamental oscillation frequency up to 831 GHz was achieved with RTD having high available current density and low capacitance. By the structure reducing the transit time, the frequency further increased to 1.04 THz. This is the first achievement of a fundamental oscillation above 1 THz in room-temperature electronic single oscillators. The output power of 400 μW at 550 GHz was obtained in a single oscillator by the offset-fed slot antenna. Coherent power combining with multi-element array was observed. The spectral linewidth, frequency change with bias voltage, and direct modulation were also described.

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mm-Wave power-combining architectures

Liu

et al. 2016

RF and Mm-Wave Power Generation in Silicon

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Generating terahertz signals in 65nm CMOS with negative-resistance resonator boosting and selective harmonic suppression

Cited by 13 publications

References 3 publications

Physical design optimization of MOSFETs for millimeter wave and sub-millimeter wave circuits

Physical design optimization of MOSFETs for millimeter wave and sub-millimeter wave circuits

Terahertz oscillators using electron devices - an approach with Resonant tunneling diodes

mm-Wave power-combining architectures

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