Generation and electrical characterization of thick SOI films

We report the first high-gain polysilicon emitter bipolar transistors fabricated on zone-melting-recrystallized (ZMR) silicon-on-insulator (SOI) material. Polysilicon emitter bipolar transistors made on bulk-silicon wafers with identical and simultaneous heat treatments show significant differences in emitter resistance and dc characteristics as compared with SO1 bipolar transistors. Post-metal anneal improves the current gain and base current ideality at low base-emitter voltages for both types of wafers.

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Generation and electrical characterization of thick SOI films

Cited by 3 publications

References 17 publications

Seeding recrystallization for producing thick silicon-on-insulator films on non-planar substrates

Seeding recrystallization for producing thick silicon-on-insulator films on non-planar substrates

Completely dielectrically isolated silicon for high voltage applications produced by zone melting recrystallization of polycrystalline Si on SiO2

High-gain SOI polysilicon emitter transistors

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