2019
DOI: 10.1039/c9na00281b
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Generation and enhancement of surface acoustic waves on a highly doped p-type GaAs substrate

Abstract: Enhancement of SAWs propagating along the surface of a highly doped p-type GaAs substrate is achieved using a ZnO/SiO2 island.

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Cited by 9 publications
(3 citation statements)
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“…The 'Aperture' (A) is finger overlap length of the IDT structure. The finger width of the IDT is denoted by W. Generally, the wavelength of the SAW device equals four times the width 'W' of the IDT structure (λ = 4 W) [20].…”
Section: Design Of Saw Devicementioning
confidence: 99%
“…The 'Aperture' (A) is finger overlap length of the IDT structure. The finger width of the IDT is denoted by W. Generally, the wavelength of the SAW device equals four times the width 'W' of the IDT structure (λ = 4 W) [20].…”
Section: Design Of Saw Devicementioning
confidence: 99%
“…The piezoelectric effect was first discovered by Pierre Curie and Jacques in the 1880s [ 1 ]. This effect describes the conversion of mechanical energy into electrical energy and vice versa [ 2 , 3 ]. Piezoelectric materials are available in natural form and can also be artificially synthesized.…”
Section: Introductionmentioning
confidence: 99%
“…The authors of [5][6][7][8] investigated the strain-resistant properties of GaAs crystals. The anomalous piezoelectric effect in GaAs nanowires was detected with the piezoelectric strain coefficient that is 12 times larger than the theoretically estimated value [7], which was explained by the dominant content of the phase with the wurtzite-type crystal structure and increased pressing forces from the contact layer.…”
Section: Introductionmentioning
confidence: 99%