Generation and inhibition of domain movement in semi-insulating GaAs:Cr

Ellin, H. C.; Grunnet‐Jepsen, A.; Solymár, L.

doi:10.1063/1.112372

Cited by 8 publications

(5 citation statements)

References 5 publications

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“…Vice versa it is possible to observe oscillations at voltages below V c , i.e., one can reduce the value of E c by means of light. 73,78,79,82,83 It is also feasible to bring the sample into the NDC region with fully developed current oscillations and then increase the light intensity or the photon energy. All authors who have done this agree that both the oscillation amplitude 55,79 and the domain velocity increase, 9,42,46,47,55,57,67,69,71,72,75,76,78,82,84,85 while the domain width decreases.…”

Section: Influence Of Illuminationmentioning

confidence: 99%

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Slow domains in semi-insulating GaAs

Neumann

2001

Journal of Applied Physics

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Articles you may be interested inBroadening effects and ergodicity in deep level photothermal spectroscopy of defect states in semi-insulating GaAs: A combined temperature-, pulse-rate-, and time-domain study of defect state kinetics Saturated electric field effect at semi-insulating GaAs-metal junctions studied with a low energy positron beam Semi-insulating GaAs shows current oscillations if a high dc voltage is applied to a sample. These oscillations are caused by traveling high-electric-field domains that are formed as a result of electric-field-enhanced electron trapping. This article describes the various types of experiments that have been carried out with this system, including recent ones that use the electro-optic Pockels effect in order to measure the local electric fields in the sample in a highly accurate manner. An historical overview of the theoretical developments is given and shows that no satisfying theory is currently available. A list of all the required ingredients for a successful theory is provided and the experimental data are explained in a qualitative manner. Furthermore, the main electron trap in semi-insulating GaAs is the native defect EL2, the main properties of which are described.

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Section: Influence Of Illuminationmentioning

confidence: 99%

“…Ellin et al 83 added a second light beam to the experiment. This second beam could be focused onto any part of the sample, while the first light beam was used to image the whole sample in the normal way of the Pockels experiment.…”

Section: Pockels Effectmentioning

confidence: 99%

Slow domains in semi-insulating GaAs

Neumann

2001

Journal of Applied Physics

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“…Usually the complex phenomena in the devices occurs under sufficiently high-excitation conditions such as large electric or magnetic fields, strong optical irradiation, or high-current injection [12]. The theory [12] and experiment [13] shows that the current flowing through a semiconductor can oscillate if a sufficiently high dc bias is applied to the sample. These oscillations are caused by domains of high electric field traveling from cathode to anode [14].…”

Section: Introductionmentioning

confidence: 99%

“…The pitch of the gratings could then be controlled by varying the frequency of ac voltage. In a different study, Ellin et al [13] investigated electrical domains in SI GaAs:Cr following the method of Rajbenbach et al and demonstrated how the domain movement can be optically controlled.…”

Section: Introductionmentioning

confidence: 99%

Spatiotemporal Transport Processes in Semiconductor Gas Discharge Structure with GaAs Photodetector

Salamov¹

2008

Acta Phys. Pol. A

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In a semiconductor gas discharge structure with diameters much larger than an inter-electrode distance, the effects of different parameters (i.e. electrode separation, gas pressure, diameter of the GaAs photodetector, etc.) on electrical breakdown and current oscillations were studied. Non-stationary and non-homogeneous states are generated in the structure, through the spatially uniform irradiation of the semiconductor photodetector. Instabilities occur due to the nonlinear features of the semiconductor photocathode, while the gas discharge serves to visualize transport processes in GaAs. Spatiotemporal variations of current and discharge light emissions are studied with the above-mentioned control parameters. Transformation of the profile and amplitude of the current densities of the filaments in different regions of the current-voltage characteristic are widely studied. Instabilities of spatially non-uniform distributions resulting in the formation of multiple current filaments with increasing voltages above the critical values are observed. A semiconductor gas discharge structure with an N -shaped current-voltage characteristic is analyzed via both the current and discharge light emissions data which shows the electrical instability in the GaAs photodetector.

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“…In the work of Rajbenbach et al [19], the experimental results show that under ac bias, the high-field domains in SI-GaAs are stationary and periodically distributed, the period being electrically controlled by the frequency of the ac voltage. The chopping of the light illumination has also a considerable effect on the LFOs in SI-GaAs because the domains can be controlled and generated artificially through the temporal variations of the optical beam [20]. The NDC region of the I-V curve can also lead to other complex nonlinear phenomena; for example, in experiments with Ge and GaAs excited with modulated far-infrared radiation, the samples can present the chaos and generation of broadband noise [21].…”

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confidence: 99%

Influence of Laser Modulation Frequency on the Performance of Terahertz Photoconductive Switches on Semi-Insulating GaAs Exhibiting Negative Differential Conductance

Paz-Martínez

Treviño‐Palacios

Molina

et al. 2021

IEEE Trans. THz Sci. Technol.

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In typical terahertz time-domain spectroscopy systems, the use of the lock-in technique is necessary because of the low current induced at the receiver so that the laser pump beam must be modulated (chopped) at a frequency much lower than the laser repetition rate. This work shows that, in the case of semi-insulating GaAs (SI-GaAs) antennas, this modulation has an important effect on the antenna current and consequently, on the radiated electromagnetic pulse. There exists a threshold bias (whose value depends on the chopping frequency) where an abrupt increase in the current and consequently, in the terahertz emission takes place. The calculated energy of the pulse below and above the threshold shows that the energy doubles. The exact bias voltage at which this occurs changes with the laser modulation frequency when this is below 350 Hz, but at higher frequencies, the threshold remains almost constant. The experiments show that the responsibility for this behavior is the S-shape negative differential conductance exhibited by SI-GaAs originated by a slow field-enhanced charge trapping mechanism, which is also an important source of noise at the receiver of the system. Index Terms-Negative differential conductance (NDC), photoconductive switch, terahertz time-domain spectroscopy (THz-TDS). I. INTRODUCTIONO VER the past years, there has been an increase of new applications at terahertz (THz) frequencies for which Manuscript

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Generation and inhibition of domain movement in semi-insulating GaAs:Cr

Cited by 8 publications

References 5 publications

Slow domains in semi-insulating GaAs

Slow domains in semi-insulating GaAs

Spatiotemporal Transport Processes in Semiconductor Gas Discharge Structure with GaAs Photodetector

Influence of Laser Modulation Frequency on the Performance of Terahertz Photoconductive Switches on Semi-Insulating GaAs Exhibiting Negative Differential Conductance

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