Generation and optimum control of picosecond optical pulses from gain-switched semiconductor lasers

Paulus, Paul B.; Langenhorst, R.; Jäger, D.

doi:10.1109/3.7078

Cited by 57 publications

(16 citation statements)

References 13 publications

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“…3(a)]. This is the standard behavior in single-section gain-switched semiconductor lasers when the bias current is increased [12,13]. The peak power increases up to a maximum level at I MO 30 mA.…”

Section: Resultsmentioning

confidence: 99%

High-peak-power pulse generation from a monolithic master oscillator power amplifier at 15 μm

et al. 2012

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We present an experimental study on the generation of high-peak-power short optical pulses from a fully integrated master-oscillator power-amplifier emitting at 1.5 μm. High-peak-power (2.7 W) optical pulses with short duration (100 ps) have been generated by gain switching the master oscillator under optimized driving conditions. The static and dynamic characteristics of the device have been studied as a function of the driving conditions. The ripples appearing in the power-current characteristics under cw conditions have been attributed to mode hopping between the master oscillator resonant mode and the Fabry-Perot modes of the entire device cavity. Although compound cavity effects have been evidenced to affect the static and dynamic performance of the device, we have demonstrated that trains of single-mode short optical pulses at gigahertz frequencies can be conveniently generated in these devices.

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Section: Resultsmentioning

confidence: 99%

High-peak-power pulse generation from a monolithic master oscillator power amplifier at 15 μm

et al. 2012

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“…The resulting optical pulse widths are generally shorter than the electrical excitation pulses and are determined by the carrier-photon interaction dynamics [26,27]. A below-threshold DC voltage is applied to optimize the pulse parameters.…”

Section: A Picosecond Regime: Gain-switchingmentioning

confidence: 99%

High Power Diode-Seeded Fiber Amplifiers at 2 μm—From Architectures to Applications

Heidt

Richardson

2014

IEEE J. Select. Topics Quantum Electron.

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Abstract-We review recent advances in the development of high power short-and ultrashort pulsed Thulium-doped fiber amplifier (TDFA) systems seeded by semiconductor laser diodes at wavelengths around 2 µm. The diode-seeding and the master oscillator power amplifier (MOPA) design allow for the construction of extremely versatile laser systems that can operate over wide ranges of peak power, pulse energy and repetition rate in the ultrashort picosecond to the long nanosecond pulsed regimes. We present a record peak power of 130 kW and pulse energy of 5 µJ in picosecond mode, while demonstrating user-defined pulse-shaping capabilities at millijoule pulse energy levels in the nanosecond regime from essentially the same amplifier system. The system architecture as well as important design and power scaling considerations are discussed in detail. Additionally, we highlight recent results in the application of these MOPA systems and their high performance TDFA stages in such diverse application areas as next generation telecommunication networks, mid-infrared supercontinuum generation and mid-infrared gas detection in hollow-core photonic bandgap fibers.

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“…Gain switching/modulation technologies (or synchronous pumping where switching/modulation frequency is a multiple of the cavity-free spectral range) are broadly used for generation of pulsed laser radiation [1][2][3][4][5]. Their main advantage consists in relatively simple implementation, since no special modulators or saturable absorbers are necessary.…”

Section: Introductionmentioning

confidence: 99%

SOA fiber laser mode-locked by gain modulation

et al. 2018

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This work reports, for the first time to our knowledge, on an experimental and theoretical study of mode locking via synchronous pumping of a semiconductor optical amplifier (SOA) used as the active medium of a fiber laser. SOA modulation with injection current pulses having duration of 1.2 μs and repetition rate equal to that of the fundamental intermode frequency spacing of the cavity (84.9 kHz) led to generation of mode-locked pulses with duration of 650 ns at a wavelength of 1.54 μm. The feasibility of the proposed method and the basic parameters of the generated pulses are corroborated by numerical modeling. The key advantages of the proposed laser are simplicity of implementation, comparatively high efficiency, spectral universality, and possibility of pulse shape control.

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Generation and optimum control of picosecond optical pulses from gain-switched semiconductor lasers

Cited by 57 publications

References 13 publications

High-peak-power pulse generation from a monolithic master oscillator power amplifier at 15 μm

High-peak-power pulse generation from a monolithic master oscillator power amplifier at 15 μm

High Power Diode-Seeded Fiber Amplifiers at 2 μm—From Architectures to Applications

SOA fiber laser mode-locked by gain modulation

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