Generation and shaping of megawatt high-voltage pulses by optoelectronic technique

<title>Ultrafast photoconductive switch with high voltage and high power</title>

“…( 3) where igap is the gap length of the switch ,N(t) is the total number of photoinduced charge carriers ( which is proportional to the optical energy of the pulse), and Rc is the total contact resistance at the electrodes of the switch. The temporal dependence ofN(t) reflects the dynamics of carrier decay.…”