2008
DOI: 10.1149/1.2986780
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Generation of Acceptor Levels in Ge by the Uniaxial Strain - A Theoretical Approach

Abstract: We have studied energetics and atomic and electronic structures of Ge mono-vacancies under biaxial and uniaxial strain. We have found that compressive strain drastically reduce the formation energy of Ge mono-vacancy, and strain induced Ge vacancy formation is expected. Further, our calculations show that energy levels of Ge mono-vacancies sensitively depend on the types of applied strain. In particular, direction of uniaxial strain greatly affects the position of Ge mono-vacancy levels. Our calculation indica… Show more

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