Generation of ammonia plasma using a helical antenna and nitridation of GaAs surface

Yasui, Kanji; Arayama, Tatsuro; Okutani, Satoshi; Ariga, Tadashi

doi:10.1016/s0169-4332(03)00135-1

Cited by 18 publications

(16 citation statements)

References 8 publications

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“…In test 4 (NH 3 ? H 2 O), we cannot exclude the presence of NH and OH radicals, which are usually present in NH 3 -H 2 O plasmas [46]. In our case these emission bands are beyond the detection limit of our CCD camera.…”

Section: In Situ Optical Emission Spectroscopymentioning

confidence: 70%

Functionalizing Single-Wall Carbon Nanotubes in Hollow Cathode Glow Discharges

Bystrzejewski

Rümmeli

Gemming

et al. 2009

Plasma Chem Plasma Process

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A hollow cathode glow discharge was used to functionalize single-wall carbon nanotubes. This low temperature, solvent free, facile and fast process may be used to efficiently attach various functional groups (COOH, OH, CH, NH 2 , NO 2 and NO) to the open ends and sidewalls of carbon nanotubes. The presented technique yields a broader set of functional groups being attached to the tubes as compared to other discharge routes. A rich functionalized surface provides an attractive scaffold for the further coupling of complex molecules, e.g., enzymes, antibodies. In situ optical emission spectroscopy investigations provided detailed information of the dynamic processes within the plasma itself. The findings show a gas temperature of 480 K and suggest the functionalization occurs through radical addition channels that are assisted by N 2 ? radical ion collisions viz. N 2 ? ion radical bombardment breaks C-C bonds on SWNTs surface opening a path for subsequent addition and quenching for other radical species.

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Section: In Situ Optical Emission Spectroscopymentioning

confidence: 70%

Functionalizing Single-Wall Carbon Nanotubes in Hollow Cathode Glow Discharges

Bystrzejewski

Rümmeli

Gemming

et al. 2009

Plasma Chem Plasma Process

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“…In addition, another deconvoluted spectra with chemical shifts 3.6 eV is noted for non-nitrided sample, indicating the existence As-O bonds from As 2 O 3 (22). However, there is an absence of any oxide-related bonds for plasma nitridated samples, which due the removal of the interfacial oxides by the plasma nitridation treatment (23). On the other hand, an extra peak centering at 38.2 eV is observed in both As3d spectra due to Ti-O bond arising from TiO 2 .…”

Section: Resultsmentioning

confidence: 92%

Interfacial and Electrical Properties of GaAs Metal-Oxide-Semiconductor Device with TiO_xN_y High-k Gate Dielectrics

et al. 2011

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Fermi level pinning attributed to oxides at the GaAs/high-k interface is a major obstacle to develop GaAs-based metal-oxidesemiconductor devices. In this paper, plasma nitridation of GaAs surface prior to the high-k deposition is shown to solve the issue of interface pinning. X-ray photoelectron spectroscopy (XPS) study confirms that nitridation passivation effectively suppresses the oxides formation and minimizes the Fermi level pinning at the interface between the GaAs and TiO 2 . Plasma-nitrided TiO 2 (TiO x N y ) films on n-GaAs show better metal-oxide-semiconductor (MOS) capacitor characteristics, such as interface state density, accumulation capacitance, hysteresis, and leakage current.

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“…1 shows the RF-NH 3 plasma spectrum during the film growth. Intense peaks of radical nitrogen and hydrogen were observed [14]. Fig.…”

Section: Methodsmentioning

confidence: 96%

Molecular beam epitaxy of ferromagnetic γ′-Fe4N thin films on LaAlO3(1 0 0), SrTiO3(1 0 0) and MgO(1 0 0) substrates

Ito

Lee

Akinaga

et al. 2011

Journal of Crystal Growth

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a b s t r a c tWe have attempted to grow a-axis-oriented g 0 -Fe 4 N epitaxial films with smooth surfaces at around 400 1C on LaAlO 3 (LAO)(1 0 0), SrTiO 3 (STO)(1 0 0) and MgO(1 0 0) substrates by molecular beam epitaxy using solid Fe and a radio-frequency NH 3 plasma as the Fe and N sources, respectively. The lattice mismatch of these substrates to g 0 -Fe 4 N is 0%, 3% and 11%, respectively. Epitaxial growth of g 0 -Fe 4 N films was successfully achieved on the STO(1 0 0) and LAO(1 0 0) substrates. It was found from reflection high-energy electron diffraction and X-ray diffraction that the a-axis orientation of g 0 -Fe 4 N was degraded with increasing lattice mismatch. High-angle annular dark-field scanning transmission electron microscopy and electron energy-loss spectroscopy measurements showed that amorphous Al-O layers were present at the g 0 -Fe 4 N/LAO interface.

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Generation of ammonia plasma using a helical antenna and nitridation of GaAs surface

Cited by 18 publications

References 8 publications

Functionalizing Single-Wall Carbon Nanotubes in Hollow Cathode Glow Discharges

Functionalizing Single-Wall Carbon Nanotubes in Hollow Cathode Glow Discharges

Interfacial and Electrical Properties of GaAs Metal-Oxide-Semiconductor Device with TiO_xN_y High-k Gate Dielectrics

Molecular beam epitaxy of ferromagnetic γ′-Fe4N thin films on LaAlO3(1 0 0), SrTiO3(1 0 0) and MgO(1 0 0) substrates

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Generation of ammonia plasma using a helical antenna and nitridation of GaAs surface

Cited by 18 publications

References 8 publications

Functionalizing Single-Wall Carbon Nanotubes in Hollow Cathode Glow Discharges

Functionalizing Single-Wall Carbon Nanotubes in Hollow Cathode Glow Discharges

Interfacial and Electrical Properties of GaAs Metal-Oxide-Semiconductor Device with TiOxNy High-k Gate Dielectrics

Molecular beam epitaxy of ferromagnetic γ′-Fe4N thin films on LaAlO3(1 0 0), SrTiO3(1 0 0) and MgO(1 0 0) substrates

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Interfacial and Electrical Properties of GaAs Metal-Oxide-Semiconductor Device with TiO_xN_y High-k Gate Dielectrics