In this work, we demonstrate reconfigurable frequency manipulation of quantum states of light in the telecom C-band. Triggered single photons are encoded in a superposition state of three channels using sidebands up to 53 GHz created by an off-the-shelf phase modulator. The single photons are emitted by an InAs/GaAs quantum dot grown by metal-organic vaporphase epitaxy within the transparency window of the backbone fiber optical network. A cross-correlation measurement of the sidebands demonstrates the preservation of the single photon nature; an important prerequisite for future quantum technology applications using the existing telecommunication fiber network.
IntroductionQuantum information science is an interdisciplinary field wherein quantum mechanics sets rules for logical bits (qubits), gates and interconnects [1]. Transferring quantum information between stationary nodes is one of the requirements to scale the field beyond isolated locations [2].Qubit teleportation protocols [3][4][5][6] or direct state transfer methods [7,8] between two nodes are commonly built based on single photons, so called "flying qubits". Photons at a wavelength of 1.55 µm [9] (C-band) can travel over large distances in optical fibers and are ideal candidates to distribute entanglement or exchange quantum information between distant network nodes, known as "quantum internet" [2, 10]. The advantage of pre-existing infrastructure for optical classical communication networks [11] leads to faster and cheaper adoption of quantum communication.Semiconductor quantum dots (QDs) are promising sources for flying qubits at 1.55 µm [12][13][14], due to the deterministic generation of single photons [15] and polarization entangled photon pairs [16,17]. The quantum dot growth via metal-organic vapor-phase epitaxy enables industrial large-scale fabrication in future photonic quantum technology applications. By combining this industry grade growth technique, used for example in LED manufacturing, with nanofabrication methods, QDs establish themselves as scalable, integratable [18] and tunable sources for the C-band [19]. As compared to the standard InP-based materials for this wavelength range, the choice of InAs/GaAs quantum dots has several advantages regarding the optical properties of the quantum dots and due to the possibility to grow lattice-matched DBRs with high refractive index contrast materials, the possibilities for cavity-enhanced emission enabling ultra-high repetition rates [13,20].Building up multi-node quantum networks requires multiple sources which need to be tuned in arXiv:1903.05556v2 [cond-mat.mes-hall]