“…Using conventional high temperature annealing, the lowest achievable Dit was approx imately 2-3x10 -/cm2-eV, a value too high to fabricate surface-channel CCDs with acceptable charge transfer efficiency [5,6]. A new technique, hydrogen implantation, has been developed to fabricate MNOS SC-CCDs with much reduced Dit (typically about lxlO9/cm2-eV at midgap) and much improved transfer efficiency [8,9].…”