1981
DOI: 10.1109/tns.1981.4335677
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Generation of SiO2 Interface States at Low Temperature with Ionizing Irradiation

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Cited by 8 publications
(5 citation statements)
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“…It has been shown in this work and elsewhere [6,10,11] The CCD is an excellent device for this because one measurement of Dit using the periodic pulse technique takes only about 30 seconds using automated equipment.…”
Section: Ccd Annealingmentioning
confidence: 67%
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“…It has been shown in this work and elsewhere [6,10,11] The CCD is an excellent device for this because one measurement of Dit using the periodic pulse technique takes only about 30 seconds using automated equipment.…”
Section: Ccd Annealingmentioning
confidence: 67%
“…These are the first reported radiation effects on N-channel CCDs fabricated with radiation-hard MNOS CCD technology; previous measurements have been on p-channel devices [5,6]. No significant degradation in the radiation tolerance of the MNOS structure due to the hydrogen implant process is observed.…”
Section: Introductionmentioning
confidence: 81%
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