Generation of spin currents by the orbital Hall effect in Cu and Al and their measurement by a Ferris-wheel ferromagnetic resonance technique at the wafer level

Rothschild, Amit; Nadav, Am-Shalom,; Bernstein, Nirel; Meron, Ma'yan; Tománek, David; Assouline, Benjamin; Frohlich, Elichai; Xiao, Jiewen; Yan, Binghai; Capua, Amir

doi:10.1103/physrevb.106.144415

Cited by 12 publications

(3 citation statements)

References 43 publications

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“…4,5 On the other hand, lighter elements like Ti and Cu, traditionally considered secondary in spintronics research, are now widely used to study spin−orbitronics phenomena at the nanoscale. 6,7 Hence, interfaces play an important role in both research and applications related to spin currents. Various techniques, including spin pumping (SP) and spin torque ferromagnetic resonance (STFMR), are employed to generate and inject spin currents across interfaces between magnetic and nonmagnetic (NM) materials.…”

Section: Introductionmentioning

confidence: 99%

“…The spin Hall effect (SHE) results in a spin current perpendicular to the direction of a charge current in materials characterized by strong spin–orbit coupling (SOC). − Heavy metal films, such as Pt, Pd, W, and Ta have frequently served as primary sources or detectors of spin current due to their strong SOC. , On the other hand, lighter elements like Ti and Cu, traditionally considered secondary in spintronics research, are now widely used to study spin–orbitronics phenomena at the nanoscale. , Hence, interfaces play an important role in both research and applications related to spin currents. Various techniques, including spin pumping (SP) and spin torque ferromagnetic resonance (STFMR), are employed to generate and inject spin currents across interfaces between magnetic and nonmagnetic (NM) materials.…”

Section: Introductionmentioning

confidence: 99%

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Bulk and Interface Effects Based on Rashba-like States in Ti and Ru Nanoscale-Thick Films: Implications for Orbital-Charge Conversion in Spintronic Devices

Santos,

Abrão,

Costa

et al. 2024

ACS Appl. Nano Mater.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Bulk and Interface Effects Based on Rashba-like States in Ti and Ru Nanoscale-Thick Films: Implications for Orbital-Charge Conversion in Spintronic Devices

Santos,

Abrão,

Costa

et al. 2024

ACS Appl. Nano Mater.

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“…However, recent theoretical work unveils that, other than a transverse spin current from SHE, an electric field applied along the plane of a metallic film can also induce a transverse orbital current due to orbital Hall effect (OHE). − Unlike the SHE, the OHE does not require SOC, and therefore, it was predicted to exist in a wide range of materials including light metals such as Al, Cu, and Cr. − Although the OHE is perceived to be more fundamental than SHE, experimental investigations on the OHE are relatively recent because of primarily two reasons: difficulty in separating the two effects that typically occur concurrently in materials with the SOC and absence of direct coupling between orbital Hall current and magnetization. Nevertheless, there is increasing evidence that the OHE is present in various light metals with negligible or weak SOC, − including the orbital Rashba–Edelstein effect. − Similar to SHE, the OHE can also induce SOT, − , orbital Hall magnetoresistance, and unidirectional orbital Hall magnetoresistance in ferromagnet (FM)/nonmagnetic metal (NM) bilayers. Notably, SOT-induced magnetization switching has been demonstrated in CoFeB/Cr without a heavy metal layer .…”

mentioning

confidence: 99%

Efficient Noncollinear Antiferromagnetic State Switching Induced by the Orbital Hall Effect in Chromium

Xie,

Zhang,

et al. 2023

Nano Lett.

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Recently, orbital Hall current has attracted attention as an alternative method to switch the magnetization of ferromagnets. Here we present our findings on electrical switching of the antiferromagnetic state in Mn 3 Sn/Cr, where despite the much smaller spin Hall angle of Cr, the switching current density is comparable to heavy metal-based heterostructures. However, the inverse process, i.e., spin-to-charge conversion in Cr-based heterostructures, is much less efficient than the Pt-based equivalents, as manifested in the 1 order of magnitude smaller terahertz emission intensity and spin current-induced magnetoresistance. These results in combination with the slow decay of terahertz emission against Cr thickness (diffusion length of ∼11 nm) suggest that the observed magnetic switching can be attributed to orbital current generation in Cr, followed by efficient conversion to spin current. Our work demonstrates the potential of light metals like Cr as efficient orbital/spin current sources for antiferromagnetic spintronics.

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Orbitronics: Mechanisms, Materials and Devices

Wang,

Chen,

Yang

et al. 2024

Adv Elect Materials

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Spintronics has been extensively explored over the past decades, focusing primarily on the spin characteristic of the electron, while the orbital feature of the electron has been conventionally assumed to be quenched by the crystal field effect. Recently, studies have unveiled a fascinating discovery that orbital current, originating from orbital effects, can be generated in materials with weak spin‐orbit coupling by applying electric fields, enabling the manipulation of the ferromagnetic magnetization and induction of terahertz emission. This review highlights recent achievements in orbital effects, materials, and devices, beginning by discussing the mechanisms underlying orbital effects, e.g. the orbital Hall effect, orbital Rashba‐Edelstein effect, inverse orbital Hall effect, and inverse orbital Rashba‐Edelstein effect. Subsequently, a wide range of materials exhibiting orbital effects are classified and the orbital sources in them are identified. Furthermore, the review introduces the orbital torque devices and the orbital terahertz emitters, summarizing the in‐depth mechanisms of the orbital torque, orbital torque efficiency, and orbital diffusion length across various material structures. Additionally, the review presents strategies for enhancing orbital torque efficiency and driving magnetization switching. These efforts aim to explore the potential applications for orbitronic memory devices, computing components, and terahertz emitters.

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Generation of spin currents by the orbital Hall effect in Cu and Al and their measurement by a Ferris-wheel ferromagnetic resonance technique at the wafer level

Cited by 12 publications

References 43 publications

Bulk and Interface Effects Based on Rashba-like States in Ti and Ru Nanoscale-Thick Films: Implications for Orbital-Charge Conversion in Spintronic Devices

Bulk and Interface Effects Based on Rashba-like States in Ti and Ru Nanoscale-Thick Films: Implications for Orbital-Charge Conversion in Spintronic Devices

Efficient Noncollinear Antiferromagnetic State Switching Induced by the Orbital Hall Effect in Chromium

Orbitronics: Mechanisms, Materials and Devices

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