Generation of Spin Defects in Hexagonal Boron Nitride

Kianinia, Mehran; White, Simon; Fröch, Johannes E.; Bradac, Carlo; Aharonovich, Igor

doi:10.1021/acsphotonics.0c00614

Cited by 116 publications

(151 citation statements)

References 39 publications

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“…Spin carrying defects have been theoretically predicted and experimentally confirmed in hBN 15 – 19 . Currently, the most understood defect is the negatively-charged boron vacancy center ( ) 20 , which can be readily created by neutron irradiation, ion implantation, or femtosecond laser pulses 21 , 22 . Due to its spin-optical properties, the center is proving to be a promising candidate system for quantum information and nanoscale quantum sensing applications and has thus expanded the already large suite of unique features displayed by 2D materials 13 .…”

Section: Introductionmentioning

confidence: 99%

Spin defects in hBN as promising temperature, pressure and magnetic field quantum sensors

et al. 2021

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Spin defects in solid-state materials are strong candidate systems for quantum information technology and sensing applications. Here we explore in details the recently discovered negatively charged boron vacancies (VB−) in hexagonal boron nitride (hBN) and demonstrate their use as atomic scale sensors for temperature, magnetic fields and externally applied pressure. These applications are possible due to the high-spin triplet ground state and bright spin-dependent photoluminescence of the VB−. Specifically, we find that the frequency shift in optically detected magnetic resonance measurements is not only sensitive to static magnetic fields, but also to temperature and pressure changes which we relate to crystal lattice parameters. We show that spin-rich hBN films are potentially applicable as intrinsic sensors in heterostructures made of functionalized 2D materials.

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Section: Introductionmentioning

confidence: 99%

Spin defects in hBN as promising temperature, pressure and magnetic field quantum sensors

et al. 2021

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“…A near-infrared wide PL band around λ = 810 nm is observed in the sample after the irradiation procedure previously shown to arise due to the presence of

defects [ 21 ]. We also note that the 532 nm (2.33 eV) excitation used for the excitation of the PL spectrum is within the optical absorption band of

defects, as was previously revealed by low-temperature photoluminescence excitation spectroscopy [ 30 ]. There, it was also shown that the PL spectrum of

defects at a low temperature does not possess any narrow peaks within the emission wavelength.…”

Section: Resultsmentioning

confidence: 56%

“…After electron irradiation, a weak wide PL band in the visible (VIS) spectral range appears. However, in previously published papers devoted to the PL properties of the

defect, this broad band was not observed [ 21 , 30 ]. In Ref.…”

Section: Resultsmentioning

confidence: 96%

“…To date, several types of irradiation techniques were used for the creation of

centers in hBN lattice. They are neutron irradiation [ 21 , 29 ], irradiation with a focused beam of different ions [ 21 , 30 ], and irradiation with the femtosecond laser pulses [ 31 ]. In this article, we explore the possibility of creating these defects by means of high-energy electron irradiation.…”

Section: Introductionmentioning

confidence: 99%

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Creation of Negatively Charged Boron Vacancies in Hexagonal Boron Nitride Crystal by Electron Irradiation and Mechanism of Inhomogeneous Broadening of Boron Vacancy-Related Spin Resonance Lines

et al. 2021

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Optically addressable high-spin states (S ≥ 1) of defects in semiconductors are the basis for the development of solid-state quantum technologies. Recently, one such defect has been found in hexagonal boron nitride (hBN) and identified as a negatively charged boron vacancy (VB−). To explore and utilize the properties of this defect, one needs to design a robust way for its creation in an hBN crystal. We investigate the possibility of creating VB− centers in an hBN single crystal by means of irradiation with a high-energy (E = 2 MeV) electron flux. Optical excitation of the irradiated sample induces fluorescence in the near-infrared range together with the electron spin resonance (ESR) spectrum of the triplet centers with a zero-field splitting value of D = 3.6 GHz, manifesting an optically induced population inversion of the ground state spin sublevels. These observations are the signatures of the VB− centers and demonstrate that electron irradiation can be reliably used to create these centers in hBN. Exploration of the VB− spin resonance line shape allowed us to establish the source of the line broadening, which occurs due to the slight deviation in orientation of the two-dimensional B-N atomic plains being exactly parallel relative to each other. The results of the analysis of the broadening mechanism can be used for the crystalline quality control of the 2D materials, using the VB− spin embedded in the hBN as a probe.

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“…In addition, ion implantation can also be used to introduce the boron-vacancy, like ion beams (E.g. nitrogen, xenon, and argon) (Kianinia et al, 2020).…”

Section: Nitrides With Defectsmentioning

confidence: 99%

Advanced Inorganic Nitride Nanomaterials for Renewable Energy: A Mini Review of Synthesis Methods

Xiong

et al. 2021

Front. Chem.

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Inorganic nitride nanomaterials have attracted widespread attention for applications in renewable energy due to novel electrochemical activities and high chemical stabilities. For different renewable energy applications, there are many possibilities and uncertainties about the optimal nitride phases and nanostructures, which further promotes the exploration of controllable preparation of nitride nanomaterials. Moreover, unlike conventional nitrides with bulk or ceramic structures, the synthesis of nitride nanomaterials needs more accurate control to guarantee the target nanostructure along with the phase purity, which make the whole synthesis still a challenge to achieve. In this mini review, we mainly summarize the synthesis methods for inorganic nitride nanomaterials, including chemistry vapor deposition, self-propagation high-temperature synthesis, solid state metathesis reactions, solvothermal synthesis, etc. From the perspective of nanostructure, several novel nitrides, with nanostructures like nanoporous, two-dimensional, defects, ternary structures, and quantum dots, are showing unique properties and getting extensive attentions, recently. Prospects of future research in design and synthesis of functional inorganic nitrides are also discussed.

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Generation of Spin Defects in Hexagonal Boron Nitride

Cited by 116 publications

References 39 publications

Spin defects in hBN as promising temperature, pressure and magnetic field quantum sensors

Spin defects in hBN as promising temperature, pressure and magnetic field quantum sensors

Creation of Negatively Charged Boron Vacancies in Hexagonal Boron Nitride Crystal by Electron Irradiation and Mechanism of Inhomogeneous Broadening of Boron Vacancy-Related Spin Resonance Lines

Advanced Inorganic Nitride Nanomaterials for Renewable Energy: A Mini Review of Synthesis Methods

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