Generation of terahertz radiation by AlGaAs nanowires

Trukhin, V. N.; Buyskih, A. C.; Bouravlev, A. D.; Мустафин, И. А.; Samsonenko, Yu. B.; Trukhin, A. V.; Cirlin, G. É.; Kaliteevski, M. A.; Zeze, Dagou A.; Gallant, Andrew J.

doi:10.1134/s0021364015170129

Cited by 3 publications

(1 citation statement)

References 22 publications

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“…Moreover, NWs have tunable length, diameter, directionality, and density so that the THz emission properties can be further adjusted. Therefore, THz emission from many semiconductor NWs have been demonstrated, such as Si [23], Ge [24], GaN [25], GaAs [22,26], InP [27], Bi 2 Te 2 Se [28] and AlGaAs [29]. Particularly, several works have intensively reported the THz emission phenomena from InAs NWs.…”

Section: Introductionmentioning

confidence: 99%

Enhanced terahertz emission from mushroom-shaped InAs nanowire network induced by linear and nonlinear optical effects

Xi¹,

Yang²,

Khayrudinov³

et al. 2021

Nanotechnology

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The development of powerful terahertz (THz) emitters is the cornerstone for future THz applications, such as communication, medical biology, non-destructive inspection, and scientific research. Here, we report the THz emission properties and mechanisms of mushroom-shaped InAs nanowire (NW) network using linearly polarized laser excitation. By investigating the dependence of THz signal to the incidence pump light properties (e.g. incident angle, direction, fluence, and polarization angle), we conclude that the THz wave emission from the InAs NW network is induced by the combination of linear and nonlinear optical effects. The former is a transient photocurrent accelerated by the photo-Dember field, while the latter is related to the resonant optical rectification effect. Moreover, the p-polarized THz wave emission component is governed by the linear optical effect with a proportion of ∼85% and the nonlinear optical effect of ∼15%. In comparison, the s-polarized THz wave emission component is mainly decided by the nonlinear optical effect. The THz emission is speculated to be enhanced by the localized surface plasmon resonance absorption of the In droplets on top of the NWs. This work verifies the nonlinear optical mechanism in the THz generation of semiconductor NWs and provides an enlightening reference for the structural design of powerful and flexible THz surface and interface emitters in transmission geometry.

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Section: Introductionmentioning

confidence: 99%

Enhanced terahertz emission from mushroom-shaped InAs nanowire network induced by linear and nonlinear optical effects

Xi¹,

Yang²,

Khayrudinov³

et al. 2021

Nanotechnology

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The application of one-dimensional nanostructures in terahertz frequency devices

Peng

Johnston

2021

Applied Physics Reviews

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One-dimensional nanostructures commonly refer to nanomaterials with a large length-to-diameter ratio, such as nanowires, nanotubes, nanorods, and nanopillars. The nanoscale lateral dimensions and high aspect ratios of these (quasi) one-dimensional nanostructures result in fascinating optical and electrical properties, including strongly anisotropic optical absorption, controlled directionality of light emission, confined charge-carrier transport and/or ballistic transport, which make one-dimensional nanostructures ideal building blocks for applications in highly integrated photonic, electronic, and optoelectronic systems. In this article, we review recent developments of very high (terahertz) frequency devices based on these one-dimensional nanostructures, particularly focusing on carbon nanotubes and semiconductor nanowires. We discuss state-of-the-art nanomaterials synthesis, device-fabrication techniques, device-operating mechanisms, and device performance. The combination of nanotechnology and terahertz science is a nascent research field which has created advanced THz sources, detectors, and modulators, leading to terahertz systems with extended functionalities. The goal of this article is to present the up-to-date worldwide status of this field and to highlight the current challenges and future opportunities.

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High Efficient THz Emission From Unbiased and Biased Semiconductor Nanowires Fabricated Using Electron Beam Lithography

Balci

Czaplewski

Jung

et al. 2017

IEEE J. Select. Topics Quantum Electron.

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Generation of terahertz radiation by AlGaAs nanowires

Cited by 3 publications

References 22 publications

Enhanced terahertz emission from mushroom-shaped InAs nanowire network induced by linear and nonlinear optical effects

Enhanced terahertz emission from mushroom-shaped InAs nanowire network induced by linear and nonlinear optical effects

The application of one-dimensional nanostructures in terahertz frequency devices

High Efficient THz Emission From Unbiased and Biased Semiconductor Nanowires Fabricated Using Electron Beam Lithography

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