Generation of V_GaTe_AsV_As Complexes in Tellurium‐doped n‐type GaAs by Low‐temperature Annealing

Abstract

It is shown that low-temperature annealing ( T = 425 to 625 "C, t 1 0.5 h) of tellurium-doped mtype GaAs crystals (no = 2 x 10l8 ~m -~) leads to a generation of VG,Tehvh complexes as a result of a diffusion of arsenic vacancies to VGaTeA, complexes or arsenic and gallium vacancies to isolated tellurium atoms. The observed regularities of generation of VGaTehVh complexes as the annealing temperature and the annealing time are varied are well explained by the proposed model of diffusion-limited formation of VGaTehVAs complexes. n O K a 3 a H 0 , S T O H U 3 K O T e M l I e p a T y p H b l t OTXUT (T= 425-625 "c, t 2 1 9) JlerUpOBaHHbIX TeJlJQ'pOM KpUCTmJlOB 7t-GdS (no = 2 X 10" CM-3) llpUBOnUT K r e H e p a 4 i U B HUX KOMnneKCOB VG,Tehvk, BCJIeJ(CTBUe nU@@)'3UU BaKaHCUh MbILUbXKa K KOMnneKCaM VGaTeAs nu60 J(U@+)'-3UU BaKaHCUfi M b l U b X K a U IXJInUX K U30JIUpOBaHHbIM aTOMaM TeJIJlypa. Ha6nmnae~bre 3aKOHO-