Generation of λ/12 Nanowires in Chalcogenide Glasses

Nicoletti, Elisa; Bulla, Douglas; Luther‐Davies, Barry; Gu, Miṅ

doi:10.1021/nl202173t

Cited by 30 publications

(21 citation statements)

References 18 publications

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“…Chalcogenide glasses, based on S, Se or Te element in combination with a suitable element from 13 th (Ga, In), 14 th (Si, Ge) or 15 th (As, Sb) group of the periodical system, are an important class of amorphous materials appropriate for many applications such as sensors [1][2][3][4], optical waveguide for integrated optic [5][6][7] or lens for IR camera [8]. Optical properties of binary chalcogenide glasses such as As 2 S 3 or As 2 Se 3 [9][10][11] and ternary systems like Ge-As-Se [12,13] have been widely studied.…”

Section: Introductionmentioning

confidence: 99%

Structural analysis of RF sputtered Ge-Sb-Se thin films by Raman and X-ray photoelectron spectroscopies

Baudet

Cardinaud

Girard

et al. 2016

Journal of Non-Crystalline Solids

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International audienceChalcogenide thin films (GeSe2)100 − x(Sb2Se3)x (with x = 10 and 50) were deposited by Radio-frequency (RF) magnetron sputtering. In order to study the impact of Ar pressure on the structure and the composition of selenide thin films structural properties of thin films and targets were investigated by means of Raman scattering spectroscopy and X-ray photoelectron spectroscopy (XPS). Under low pressure (5 · 10− 3 mbar), the increase of wrong bonds like Ge(Sb)-Ge(Sb) was confirmed by Raman and also XPS for both composition. The observed structural changes with Ar pressure are linked with modification of the composition of the selenide films analyzed by EDS and XPS. Furthermore for higher Ar pressure (5 · 10− 2 mbar), RF sputtered thin film and target structure present a great similarity. These differences driven by Ar pressure modification are probably related to distinctive sputtering rate and mean free path of the particles ejected from target for the different Ar pressure

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Section: Introductionmentioning

confidence: 99%

Structural analysis of RF sputtered Ge-Sb-Se thin films by Raman and X-ray photoelectron spectroscopies

Baudet

Cardinaud

Girard

et al. 2016

Journal of Non-Crystalline Solids

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“…1a). Though the use of near-field nano-focusing has recently enabled low-cost plasmonic lithography with sub-100 nm resolution and 22 nm feature size 2 , this approach inherently cannot facilitate the nanofabrication of three-dimensional (3D) structures that are highly required in next-generation nanophotonic devices 3,4 . Optical beam lithography (OBL) based on focusing through a high numerical aperture objective 5 is an ultimate approach to 3D nanofabrication (Fig.…”

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confidence: 99%

Three-dimensional deep sub-diffraction optical beam lithography with 9 nm feature size

et al. 2013

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The current nanofabrication techniques including electron beam lithography provide fabrication resolution in the nanometre range. The major limitation of these techniques is their incapability of arbitrary three-dimensional nanofabrication. This has stimulated the rapid development of far-field three-dimensional optical beam lithography where a laser beam is focused for maskless direct writing. However, the diffraction nature of light is a barrier for achieving nanometre feature and resolution in optical beam lithography. Here we report on three-dimensional optical beam lithography with 9 nm feature size and 52 nm two-line resolution in a newly developed two-photon absorption resin with high mechanical strength. The revealed dependence of the feature size and the two-line resolution confirms that they can reach deep sub-diffraction scale but are limited by the mechanical strength of the new resin. Our result has paved the way towards portable three-dimensional maskless laser direct writing with resolution fully comparable to electron beam lithography.

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“…Many important ChGs photonic devices created by femtosecond laser micromachining have been successfully applied to infrared fiber lasers, optical waveguides, photonic crystals (PCs), and nonlinear optical switches . Gu et al prepared a three‐dimensional (3D) PC in ChGs by direct laser writing with a feature size of only λ /12; a bandgap in mid‐infrared (MIR) was observed in their study . Bernier et al achieved a 3.77 μm laser output from an infrared Raman fiber laser using a cascaded Fabry‐Perot cavity structure by writing fiber gratings in an As 2 Se 3 fiber using a femtosecond laser.…”

Section: Introductionmentioning

confidence: 99%

Surface damage and threshold determination of Ge–As–Se glasses in femtosecond pulsed laser micromachining

Wang

Zhang

et al. 2019

J Am Ceram Soc

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Ge–As–Se chalcogenide glasses were prepared and the surface damage characteristics under femtosecond laser irradiation were experimentally investigated. Femtosecond laser beams with different power intensities, focusing depths, pulse repetition rates, and pulse numbers were employed to determine the damage thresholds of the samples. The surface morphologies and feature sizes of the damage craters were studied with regard to laser energy density to evaluate the damage circumstances of the glasses. The generation of the surface damage was also recorded by using different numbers of pulses. Results showed that the damage area increased monotonically with the laser power at low energy density and tended to saturation when reaching a critical value. According to the linear circumstances of laser energy density on the damage crater area, the average damage thresholds of the Ge–As–Se glasses with different repetition rates and pulse numbers were obtained. Results showed that the damage threshold decreased with the increase in pulse repetition rate and number of pulse.

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Generation of λ/12 Nanowires in Chalcogenide Glasses

Cited by 30 publications

References 18 publications

Structural analysis of RF sputtered Ge-Sb-Se thin films by Raman and X-ray photoelectron spectroscopies

Structural analysis of RF sputtered Ge-Sb-Se thin films by Raman and X-ray photoelectron spectroscopies

Three-dimensional deep sub-diffraction optical beam lithography with 9 nm feature size

Surface damage and threshold determination of Ge–As–Se glasses in femtosecond pulsed laser micromachining

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