Generation-recombination noise in extrinsic photoconductive detectors

Brukilacchio, Thomas J.; Skeldon, Mark D.; Boyd, Robert W.

doi:10.1364/josab.1.000354

Cited by 8 publications

(3 citation statements)

References 4 publications

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“…For a power law like (18) and for N max >> 1, the mean return time N r will be much larger then 1; according to (17) this is giving rise to s s τ ρ >> (19) Equation (18) suggests that the return time for different lattice structures and diffusion mechanisms is also distributed like a power law with some exponent z. However, instead of estimating exponent z for different lattice structures, the exponent z will be determined in a different way: as is shown in [13], intermittent processes as are seen in Figs.…”

Section: Random Walk and Return Time Statistics Of Impurity Centersmentioning

confidence: 99%

“…According to (14), (19) and (23), G I B (f) will have the following spectral contributions: intermittent g-r noise:…”

Section: Spectral Features In Case Bmentioning

confidence: 99%

“…This is giving rise to pulse train I A (t) with spectrum G I A (f) being due to an individual X-center. By analogy to (15), the spectrum in the probe volume will be (14), (19) and (24), we get g-r noise: …”

Section: Ionization Energy Of X-centers Locally Is Increased In Presementioning

confidence: 99%

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1/f NOISE DUE TO ATOMIC DIFFUSION OF IMPURITY CENTERS IN SEMICONDUCTORS

Grüneis¹

2001

Fluct. Noise Lett.

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Atomic diffusion of impurity centers is investigated as a possible origin of 1/f noise in semiconductors. Following the trace of an individual impurity center, the noise produced at a certain site is calculated; due to diffusion of centers this is an intermittent process. Besides generation-recombination (= g-r) noise, an excess noise is obtained which is attributed to diffusion of impurity centers. This excess noise exhibits 1/f noise and g-r burst noise. 1/f noise is attributed to the return time of a center to the origin; g-r burst noise is the noise produced by centers residing at a certain site. For a n-type strongly extrinsic semiconductor, the Hooge coefficient α of the present model is derived and impact of compensating acceptors or additional doping by shallow centers is investigated. Increasing the concentration of additional shallow centers α is decreased; an increase of concentration of compensating acceptors results in an increase of α. The temperature dependence of the Hooge coefficient α(T) is calculated and is compared with empirical findings.

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Section: Random Walk and Return Time Statistics Of Impurity Centersmentioning

confidence: 99%

“…According to (14), (19) and (23), G I B (f) will have the following spectral contributions: intermittent g-r noise:…”

Section: Spectral Features In Case Bmentioning

confidence: 99%