“…Thin silicon nitride (Si 3 N 4 ) films are widely used for gate spacers and diffusion barriers in the microelectronics industry. − Typically, Si 3 N 4 films are grown by low-pressure chemical vapor deposition (LPCVD) at high temperatures (750 °C) or by plasma-enhanced chemical vapor deposition (PECVD) at lower temperatures. − However, as devices continue to scale down, the requirements for conformality and step-coverage are becoming more stringent, making CVD-based processes inadequate . In contrast, atomic layer deposition (ALD) is a technique based on self-limiting surface reactions, which allows for the growth of high quality, highly conformal thin films on both planar and 3-D (e.g., trenches, nanorods, nanoparticles, etc.)…”