Genetic-algorithm-combined density functional theory calculations for investigating atomic properties of Si−Ge alloys

Bekku, Hibiki; Noda, Yusuke; Sueoka, Koji

doi:10.1016/j.mssp.2024.108727

Materials Science in Semiconductor Processing

2024

DOI: 10.1016/j.mssp.2024.108727

|View full text |Cite

Genetic-algorithm-combined density functional theory calculations for investigating atomic properties of Si−Ge alloys

Hibiki Bekku,

Yusuke Noda,

Koji Sueoka

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2024

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Epitaxial growth of Ge_1−xSn_x thin film with Sn composition of 50% and possibility of Ge–Sn ordered bonding structure formation

Shibayama,

Shibata,

Sakashita

et al. 2024

Appl. Phys. Express

View full text Add to dashboard Cite

We examined the epitaxial growth of Ge1−x Sn x thin film with x~0.50 on GaSb(111) substrate using a low-temperature molecular beam epitaxy. X-ray diffraction and Raman scattering spectroscopy analyses revealed that the Ge1−x Sn x thin film with x~0.50 with no strain was successfully grown on GaSb(111). Furthermore, in the Raman analysis, Ge1−x Sn x with x~0.50 showed a sharper Ge-Sn peak compared to Ge-Ge and Sn-Sn peaks, and an improved thermal stability than Ge1−x Sn x with a smaller Sn composition. This suggests that the Ge1−x Sn x with x~0.50 would have an ordered Ge-Sn bonding like a zinc blend system, that is significantly different from Si1−x Ge x case.

show abstract

Epitaxial growth of Ge_1−xSn_x thin film with Sn composition of 50% and possibility of Ge–Sn ordered bonding structure formation

Shibayama,

Shibata,

Sakashita

et al. 2024

Appl. Phys. Express

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Genetic-algorithm-combined density functional theory calculations for investigating atomic properties of Si−Ge alloys

Cited by 1 publication

References 35 publications

Epitaxial growth of Ge_1−xSn_x thin film with Sn composition of 50% and possibility of Ge–Sn ordered bonding structure formation

Epitaxial growth of Ge_1−xSn_x thin film with Sn composition of 50% and possibility of Ge–Sn ordered bonding structure formation

Contact Info

Product

Resources

About

Genetic-algorithm-combined density functional theory calculations for investigating atomic properties of Si−Ge alloys

Cited by 1 publication

References 35 publications

Epitaxial growth of Ge1−xSnx thin film with Sn composition of 50% and possibility of Ge–Sn ordered bonding structure formation

Epitaxial growth of Ge1−xSnx thin film with Sn composition of 50% and possibility of Ge–Sn ordered bonding structure formation

Contact Info

Product

Resources

About

Epitaxial growth of Ge_1−xSn_x thin film with Sn composition of 50% and possibility of Ge–Sn ordered bonding structure formation

Epitaxial growth of Ge_1−xSn_x thin film with Sn composition of 50% and possibility of Ge–Sn ordered bonding structure formation