Geometric factors in the magnetoresistance of n-doped InAs epilayers

Sun, Jian; Soh, Yeong‐Ah; Kosel, Jürgen

doi:10.1063/1.4834518

Cited by 11 publications

(7 citation statements)

References 30 publications

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“…The magnetoresistance attains 491% at 2.1T and still tends to rise with the increase of the magnetic field. This result is comparable to other researches on Corbino magnetoresistance for magnetic and nonmagnetic materials . We attribute this phenomenon to the increase of photoinduced carriers and the bending of their diffusion path.…”

Section: Introductionsupporting

confidence: 90%

Laser‐Triggered Large Magnetoresistance Change Observed in Corbino Disk of Cu/SiO₂/Si

Dong

Zheng

et al. 2019

Adv Elect Materials

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Magnetic materials are commonly used in the research of Corbino magnetoresistance. [17,18] Since the recent discoveries of large geometric magnetoresistance effect in non-magnetic semiconductors, [19][20][21][22] especially silicon, [23,24] there has been a technological and fundamental interest in this phenomenon. Theoretically, several models have been proposed to explain the basic mechanism, which generally conclude that the basic cause of the effect is unevenly carrier distribution and the bending of current path. [25][26][27] As an effectual method to change and adjust the carrier distribution, photoelectric effect provides a novel solution. The contribution of photoinduced carriers to magnetoresistance is rarely reported.Based on the above ideas, we prepared a set of nonmagnetic Corbino type disks of Cu/SiO 2 /Si structure. This distinctive structure presents huge magnetoresistive effect with the combined application of laser and magnetic field. The magnetoresistance attains 491% at 2.1T and still tends to rise with the increase of the magnetic field. This result is comparable to other researches on Corbino magnetoresistance for magnetic and nonmagnetic materials. [17,28] We attribute this pheno menon to the increase of photoinduced carriers and the bending of their diffusion path. Compared with our previous research on the magnetoresistance effect in rectangular slit structure, [26] Corbino disk would not truncate and accumulate photoinduced carriers since its circular asymmetry structure, and the magnetoresistance can be regulated by the thickness of metal film in the ring groove. This tunable magnetoresistance effect may provide a new approach for the development of magnetoresistive device. Figure 1a shows the structure of Corbino disk. r 1 and r 2 are the inner radius and outer radius, respectively. The Cu layers were deposited on n-type Si (111) substrates (with a 1.2 nm native oxide layer) by DC magnetron sputtering at room temperature. The thickness of Si wafers is about 3 mm and the resistivity is 50-80 Ω cm. The center and peripheral regions of the disk are Cu bulk layers with the thickness of 22.5 nm, which ensure the resistance is low enough. [26] And the part The Corbino disk is used to study magnetoresistance as it eliminates Hall-voltage interference and allows for direct probing of bulk properties. A laser-triggered magnetoresistance effect in the Corbino disk of a Cu/ SiO 2 /Si structure is reported. When a laser is applied, the magnetoresistance is greatly improved, by 360 times, under a 635 nm laser and a 2.1T magnetic field. In addition, the effect shows a close connection with the geometry of the nanoscale metal-film structure. This effect is attributed to an increase in carrier concentration and bending of the motion path under the laser and magnetic field. This work suggests a new approach for the exploration of the magnetoelectric properties of nanoscale metal films and opens a new window on the use of light to adjust magnetoresistance devices. Fabrication and Methods

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Section: Introductionsupporting

confidence: 90%

Laser‐Triggered Large Magnetoresistance Change Observed in Corbino Disk of Cu/SiO₂/Si

Dong

Zheng

et al. 2019

Adv Elect Materials

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“…The magnitude of the magnetic force on the moving carrier is governed by its drift velocity in the electric field. Therefore, the size of the magnetic deflection, and resulting resistance change, can be used to infer carrier mobility [48][49][50] . This approach is commonly used to characterise the mobility active in short channel device geometries, where the sample is much wider than it is long [51][52][53][54][55] (𝑙/𝑤 ≪ 1, where 𝑙 is the length between current carrying electrodes and 𝑤 is the channel width).…”

Section: Lno Domain Walls As Corbino Conesmentioning

confidence: 99%

“…Therefore, the size of the magnetic deflection, and resulting resistance change, can be used to infer carrier mobility. [48][49][50] This approach is commonly used to characterize the mobility active in short-channel device geometries, where the sample is much wider than it is long [51][52][53][54][55] (l/w ≪ 1, where l is the length between current carrying electrodes and w is the channel width). In this geometry, known as the "short Hall bar," many carriers, which are deflected by a Lorentz force, reach the sink electrode before encountering a sample boundary.…”

Section: Lno Domain Walls As Corbino Conesmentioning

confidence: 99%

Ultrahigh Carrier Mobilities in Ferroelectric Domain Wall Corbino Cones at Room Temperature

Colbear

McConville

et al. 2022

Advanced Materials

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Recently, electrically conducting heterointerfaces between dissimilar band-insulators (such as lanthanum aluminate and strontium titanate) have attracted considerable research interest. Charge transport has been thoroughly explored and fundamental aspects of conduction firmly established.Perhaps surprisingly, similar insights into conceptually much simpler conducting homointerfaces, such as the domain walls that separate regions of different orientations of electrical polarisation within the same ferroelectric band-insulator, are not nearly so well-developed. Addressing this disparity, we herein report magnetoresistance in approximately conical 180 o charged domain walls, which occur in partially switched ferroelectric thin film single crystal lithium niobate. This system is ideal for such measurements: firstly, the conductivity difference between domains and domain walls is extremely and unusually large (a factor of at least 10 13 ) and hence currents driven through the thin film, between planar top and bottom electrodes, are overwhelmingly channelled along the walls; secondly, when electrical contact is made to the top and bottom of the domain walls and a magnetic field is applied along their cone axes (perpendicular to the thin film surface), then the test geometry mirrors that of a Corbino disc, which is a textbook arrangement for geometric magnetoresistance measurement. Our data imply carriers at the domain walls with extremely high room temperature Hall mobilities of up to ~ 3,700cm 2 V -1 s -1 . This is an unparalleled value for oxide interfaces (and for bulk oxides too) and is most comparable to mobilities in other systems typically seen at cryogenic, rather than at room, temperature.

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“…These materials include indium antimonide (InSb) [1][2][3] and indium arsenide (InAs) [4] whose mobility could be beyond 1 m 2 /V s. In these materials, Lorentz force governs OMR. According to Onsager relation [5], the maximum OMR is (μB) 2 at small field of B 5μ À 1 and saturates at high field.…”

Section: Introductionmentioning

confidence: 99%

Nonlocal ordinary magnetoresistance in indium arsenide

Liu

Yuan

et al. 2015

Journal of Magnetism and Magnetic Materials

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Geometric factors in the magnetoresistance of n-doped InAs epilayers

Cited by 11 publications

References 30 publications

Laser‐Triggered Large Magnetoresistance Change Observed in Corbino Disk of Cu/SiO₂/Si

Laser‐Triggered Large Magnetoresistance Change Observed in Corbino Disk of Cu/SiO₂/Si

Ultrahigh Carrier Mobilities in Ferroelectric Domain Wall Corbino Cones at Room Temperature

Nonlocal ordinary magnetoresistance in indium arsenide

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Geometric factors in the magnetoresistance of n-doped InAs epilayers

Cited by 11 publications

References 30 publications

Laser‐Triggered Large Magnetoresistance Change Observed in Corbino Disk of Cu/SiO2/Si

Laser‐Triggered Large Magnetoresistance Change Observed in Corbino Disk of Cu/SiO2/Si

Ultrahigh Carrier Mobilities in Ferroelectric Domain Wall Corbino Cones at Room Temperature

Nonlocal ordinary magnetoresistance in indium arsenide

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Laser‐Triggered Large Magnetoresistance Change Observed in Corbino Disk of Cu/SiO₂/Si

Laser‐Triggered Large Magnetoresistance Change Observed in Corbino Disk of Cu/SiO₂/Si