A series of bithiophene derivatives bearing an intramolecular monosilanylene or disilanylene bridge between the β,β‘-positions were synthesized, and their properties were
investigated. UV spectral and cyclic voltammetric analyses of the silicon-bridged bithiophenes
indicated that they have lower lying LUMOs, relative to those for bithiophene and methylene
bridged bithiophenes, probably due to σ*−π* interaction between the silicon atom(s) and
bithiophene π-orbitals, in good agreement with the results of theoretical calculations using
simplified model compounds based on RHF/6-31G. The silicon-bridged bithiophenes exhibit
high electron-transporting properties, and triple-layer-type electroluminescent (EL) devices,
using the silicon-bridged bithiophenes, tris(8-quinolinolato)aluminum(III) complex (Alq), and
N,N‘-diphenyl-N,N‘-di-m-tolylbiphenyl-4,4‘-diamine (TPD) as the electron-transporting,
emitting, and hole-transporting layers, respectively, emitted strong EL.