Geometrical effects in high current gain 1100-V 4H-SiC BJTs

Domeij, Martin; Lee, H.-S.; Danielsson, Erik; Zetterling, Carl-Mikael; Östling, Mikael; Schöner, Adolf

doi:10.1109/led.2005.856010

Cited by 60 publications

(40 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Although very high-voltage (9~10 kV) SiC BJTs have been reported (32,33), they suffered from relatively low current gains (10-30), due to short carrier lifetimes and surface recombination. Even for relatively low-voltage (~ 1 kV) BJTs, the current gain has been limited to 50~130 (34,35). The authors succeeded in developing an original fabrication process, which is effective for achieving high current gains in SiC BJTs.…”

Section: High-current-gain Bipolar Junction Transistors (Bjts)mentioning

confidence: 99%

Defect Electronics in SiC and Fabrication of Ultrahigh-Voltage Bipolar Devices

Kimoto

Suda

et al. 2013

ECS Trans.

View full text Add to dashboard Cite

Fast epitaxial growth, defect reduction, device designing, and process development in SiC toward ultrahigh-voltage (> 10 kV) bipolar devices are investigated. 100~200 um-thick 4H-SiC epilayers with a low background doping concentration in the low 10^{13} cm^{-3} can be grown at a growth rate greater than 50 um/h. Impacts of extended defects on carrier recombination are clarified in photoluminescence mapping measurements. Generation and reduction of Z_{1/2} center, the dominant lifetime killer, are summarized. After Z_{1/2} elimination by thermal oxidation at 1400^{o}C, the carrier lifetime can be enhanced to 25 us or even longer. By utilizing space-modulated junction termination extension, a 21.7 kV PiN diode is demonstrated. Through unique process development, the current gain in bipolar junction transistors is increased to 250~330.

show abstract

Section: High-current-gain Bipolar Junction Transistors (Bjts)mentioning

confidence: 99%

Defect Electronics in SiC and Fabrication of Ultrahigh-Voltage Bipolar Devices

Kimoto

Suda

et al. 2013

ECS Trans.

View full text Add to dashboard Cite

show abstract

“…Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to a penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. [1,[4][5][6]. In the fabrication of 4H-SiC BJTs, the base Ohmic contact is usually formed on a heavily implanted p+ region.…”

Section: Form Approved Omb No 0704-0188mentioning

confidence: 99%

Implantation-Free 4H-SiC Bipolar Junction Transistors With Double Base Epilayers

Zhang

Alexandrov

et al. 2008

IEEE Electron Device Lett.

View full text Add to dashboard Cite

Abstract-This paper reports the first 4H-SiC power bipolar junction transistor (BJT) which is completely free of ion implantation and hence is free of the implantationinduced crystal damages and high-temperature activation annealing-induced surface roughness. The BJT is designed to have double epitaxial p-type base layers with the top layer more heavily doped for direct Ohmic contact formation while at the same time supporting a robust single-step junction termination extension without the need of ion implantation. The double layers create a built-in electric field in the base region which helps to speed up injected electrons across the base and leads to an improve BJT current gain. Based on this novel design and implantation-free process, a 4H-SiC BJT has been fabricated to reach an open base collector-to-emitter blocking voltage of over 1300 V with a current gain up to 31, using a drift layer of 11.5 μm, lightly-doped to 8. Public reporting burden for the collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden, to Washington Headquarters Services, Directorate for Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to a penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number.

show abstract

“…In recent years, there has been considerable interest to improve the breakdown voltage, maximum current gain (β) and J C , meanwhile, decreasing the R ON [2]- [12]. The progress has been achieved by using continuous epitaxial growth [9], optimized device geometry [10], and improved surface passivation [11], [12]. All 4H-SiC BJTs; hitherto, employ the linear interdigitated fingers to diminish the current crowding at the edge of the emitter.…”

Section: Introductionmentioning

confidence: 99%

Optimal Emitter Cell Geometry in High Power 4H-SiC BJTs

Salemi

Elahipanah

Zetterling

et al. 2015

IEEE Electron Device Lett.

View full text Add to dashboard Cite

Abstract-Three 4H-SiC BJT designs with different emitter cell geometries (linear interdigitated fingers, square cell geometry, and hexagon cell geometry) are fabricated, analyzed, and compared with respect to current gain, on-resistance, current density, and temperature performance for the first time. Emitter size effect and surface recombination are investigated. Due to a better utilization of the base area, optimal emitter cell geometry significantly increases the current density (J C ) about 42% and reduces the on-resistance (R ON ) about 21% at a given current gain, thus making the device more efficient for high-power and high-temperature applications.

show abstract

Geometrical effects in high current gain 1100-V 4H-SiC BJTs

Cited by 60 publications

References 9 publications

Defect Electronics in SiC and Fabrication of Ultrahigh-Voltage Bipolar Devices

Defect Electronics in SiC and Fabrication of Ultrahigh-Voltage Bipolar Devices

Implantation-Free 4H-SiC Bipolar Junction Transistors With Double Base Epilayers

Optimal Emitter Cell Geometry in High Power 4H-SiC BJTs

Contact Info

Product

Resources

About