Geometrically Enhanced Graphene Tunneling Diode With Lateral Nano-Scale Gap

Yang, Jae Hyuk; Shin, Jeong Hee; Kim, Seunguk; Pyo, Goeun; Jang, A‐Rang; Yang, Hyoung Woo; Kang, Dae Joon; Jang, Jae Eun

doi:10.1109/led.2019.2940818

Cited by 7 publications

(4 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…First, the diode function was studied. The anode and cathode were fabricated as a sharp tip structure to maximize the electrical field by a structural effect. ,,,, The sharp tip structure can enhance the electrical field approximately by more than 2-fold at the point of the tip relative to a flat electrode structure. , Before vacuum sealing, the tunneling diode was measured in air and vacuum state using a vacuum test chamber (Figure c, left and middle, respectively). Without the sealing process, there was quite a low current flow below 50 V, even though the anode and cathode gap was approximately 100 nm, which was slightly larger than the MFP.…”

Section: Resultsmentioning

confidence: 99%

“…Quantum mechanical tunneling is a good candidate solution. , A tunneling device has an ultrathin potential barrier so that electrons can penetrate the potential barrier. Thus, it can show high operating speed, a sub–60 mV/decade subthreshold swing, low operating voltage, and high current efficiency. − Usually, an oxide material or a semiconductor is used as the tunneling barrier. − However, in this case, some issues still remain, such as electron trap and scattering due to the defects in the barrier. This easily degrades the electrical properties of the device.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Vacuum Tunneling Transistor with Nano Vacuum Chamber for Harsh Environments

Heo,

Shin,

Jun

et al. 2023

ACS Nano

Self Cite

View full text Add to dashboard Cite

A nano vacuum tube which consists of a vacuum transistor and a nano vacuum chamber was demonstrated. For the device, a vacuum region is an electron transport channel, and a vacuum is a tunneling barrier. Tilted angle evaporation was studied for the formation of the nano level vacuum chamber structure. This vacuum tube was ultraminiaturized with several tens of 10–18 L scale volume and 10–6 Torr of pressure. The device structure made it possible to achieve a high integration density and to sustain the vacuum state in various real operations. In particular, the vacuum transistor performed stably in extreme external environments because the tunneling mechanism showed a wide range of working stability. The vacuum was sustained well by the sealing layer and provided a defect-free tunneling junction. In tests, the high vacuum level was maintained for more than 15 months with high reliability. The Al sealing layer and tube structure can effectively block exposed light such as visible light and UV, enabling the stable operation of the tunneling transistor. In addition, it is estimated that the structure blocks approximately 5 keV of X-ray. The device showed stable operating characteristics in a wide temperature range of 100–390 K. Therefore, the vacuum tube can be used in a wide range of applications involving integrated circuits while resolving the disadvantages of a large volume in old vacuum tubes. Additionally, it can be an important solution for next-generation devices in various fields such as aerospace, artificial intelligence, and THz applications.

show abstract

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

Vacuum Tunneling Transistor with Nano Vacuum Chamber for Harsh Environments

Heo,

Shin,

Jun

et al. 2023

ACS Nano

Self Cite

View full text Add to dashboard Cite

show abstract

“…The barrier shape changes from a trapezoid to a triangle. Under this circumstance, the electrons can tunnel through the triangle barrier with a shorter tunnel distance [10,44], namely F-N tunneling process (figure 10(b)). The Ag cations connect the top and the bottom electrodes when the voltage reaches the set voltage.…”

Section: Resultsmentioning

confidence: 99%

“…It is usually observed in high-quality insulators or semiconductors because trapping states will inhibit the carrier tunneling. The tunneling feature can be applied to high-speed rectifiers [10], high-efficiency solar cells [11], and flash memories [12].…”

Section: Introductionmentioning

confidence: 99%

High on–off current ratio titanium oxynitride write-once-read-many-times memory

Hsu¹,

Jhang²,

Chien³

et al. 2021

Semicond. Sci. Technol.

View full text Add to dashboard Cite

In this letter, we demonstrate a titanium oxynitride (TiO x N y ) write-once-read-many-times memory with a high ON/OFF current ratio of 109. The endurance and read-disturb tests both reveal high stability and data nonvolatility of the TiO x N y resistive memory. A Ti metal layer was transformed into TiO x N y using an annealing process in a nitrogen ambient. The XPS analysis shows that the TiO x N y resistive switching (RS) layer possesses few Ti interstitial defects and oxygen deficiencies. A voltage-polarity dependent set process is observed in the Ag/TiO x N y /Ti/n+-Si resistive memory. The residual Ti metal layer provides a good contact with the TiO x N y RS layer, and the electrons can transport from the Ti to the Ag electrode via tunneling processes. In the low voltage region, the conduction current is dominated by the direct tunneling mechanism. When the voltage is beyond a transition voltage of 1.25 V, the carrier transport mechanism changes to Fowler–Nordheim tunneling. The conduction mechanisms are consistent with the finding obtained by the energy band diagram analysis.

show abstract

Perfect transmission of the ultrarelativistic quasielectrons in pristine graphene

Korol

2022

Physica E: Low-dimensional Systems and Nanostructures

View full text Add to dashboard Cite

Geometrically Enhanced Graphene Tunneling Diode With Lateral Nano-Scale Gap

Cited by 7 publications

References 17 publications

Vacuum Tunneling Transistor with Nano Vacuum Chamber for Harsh Environments

Vacuum Tunneling Transistor with Nano Vacuum Chamber for Harsh Environments

High on–off current ratio titanium oxynitride write-once-read-many-times memory

Perfect transmission of the ultrarelativistic quasielectrons in pristine graphene

Contact Info

Product

Resources

About