Geometrically Induced Multiple Coulomb Blockade Gaps

Shin, Mincheol; Lee, Seongjae; Park, Kyoung Wan; Lee, El-Hang

doi:10.1103/physrevlett.80.5774

Cited by 28 publications

(36 citation statements)

References 6 publications

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“…the array with two branches between the source and the drain), this behavior is further generalized: that is, the current peaks can appear during each transition from odd n to even n . 8 We have reported in Ref. 8 that three peaks can be observed for the array of 60 islands, during each transition of n = 1 → 2, 3 → 4, and 5 → 6.…”

Section: A Stationary Charge Configurationsmentioning

confidence: 99%

“…8 We have reported in Ref. 8 that three peaks can be observed for the array of 60 islands, during each transition of n = 1 → 2, 3 → 4, and 5 → 6. The reason that the current peaks arise only when n t changes from odd to even is that the transition from even to odd n t does not involve unstable charge states during the transition.…”

Section: A Stationary Charge Configurationsmentioning

confidence: 99%

“…We have shown that, in the ring-shaped array, during the transition from odd to even n t there may exist such a conducting region, but during the transition from even to odd n t no such conducting region exists. 8 We qualitatively explained the behavior by noting that the topology of the array demands that dynamically unstable charge configurations must be passed during the odd-to-even transition, but not necessarily during the even-to-odd transition. Our argument leads us to state that the MCB gaps are a unique transport property of the ring-shaped array, which cannot be seen in linear 1D arrays, even with artificially trapped electrons.…”

Section: Introductionmentioning

confidence: 99%

“…7 We have recently reported that up to six electrons can be trapped inside the sixty-island ring-shaped array. 8 An important consequence of electrons' getting trapped inside the ring-shaped array is appearance of the multiple Coulomb blockade (MCB) gaps in the zero-temperature I − V characteristics. 8 While electrons are trapped inside, they block the electrical conduction through the array so no current flows.…”

Section: Introductionmentioning

confidence: 99%

“…8 An important consequence of electrons' getting trapped inside the ring-shaped array is appearance of the multiple Coulomb blockade (MCB) gaps in the zero-temperature I − V characteristics. 8 While electrons are trapped inside, they block the electrical conduction through the array so no current flows. Let us denote such zero-current region with n t trapped electrons by R(n t ), and let us suppose that up to N t electrons can be trapped inside.…”

Section: Introductionmentioning

confidence: 99%

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Secondary Coulomb blockade gap in a four-island tunnel-junction array

et al. 1999

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In the ring-shaped tunnel-junction array with four islands, the secondary Coulomb blockade gap in a low bias-voltage range is observed in the I − V characteristics. We attribute its appearance to the unique topology of the array which induces up to two electrons to get trapped inside. We have analyzed the formation and destruction of the gap in terms of detailed single-electron tunneling processes. The negative differential resistance behavior when the thermal and quantum fluctuations are present is also studied.73.23. Hk,

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Section: A Stationary Charge Configurationsmentioning

confidence: 99%

Section: A Stationary Charge Configurationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Secondary Coulomb blockade gap in a four-island tunnel-junction array

et al. 1999

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Memory Effect and Negative Differential Resistance by Electrode‐ Induced Two‐Dimensional Single‐ Electron Tunneling in Molecular and Organic Electronic Devices

et al. 2005

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Beyond the demonstration of single-molecule (or singleatom) and organic-thin-film transistors, [1±4] a reliable electrode contact remains one of the most critical challenges in the development of molecular and organic electronics. Except for the tip of a scanning tunneling microscope, [5±7] more practical connections often involve a metal/ insulator(semiconductor)/metal thin-film structure, either through a gate thin-film dielectric assembly below the source±drain, [1±4] or a insulating thin-film separator which runs parallel to the molecular path. [8,9] To achieve practical applications, not only does one need ohmic contacts so that any nonlinearity can be correctly attributed, but also a much more insulating medium to minimize the influence from the surroundings.[10] However, one often encounters unexpected current±voltage characteristics which do not arise from the given atoms or molecules. For example, negative differential resistance (NDR) [11±15] and the memory effect (hysteresis) [16±21] were found not only in singlemolecule devices, but also in organic thin-film transistors, organic light-emitting devices, and metal/inorganic insulator/ metal systems.[22±26] Despite many years of effort, the precise origin of the phenomena remains unknown, which has become a major obstacle in the research and development of new electronic devices. In this report, we try to reveal the origin of such phenomena, based on new experiment results from various metals and both organic and polymeric thin films. The answer is surprisingly found to be two-dimensional (2D) single-electron tunneling due to nanometer-sized metal islands, which were manifested unexpectedly through a wellknown process where some nuclei were blocked from further growth by the sealing of electrode outside crevices. The results not only provide a satisfactory explanation of the anomalous phenomena, but also open a new door to the construction and fabrication of molecular electronic and memory devices.The widespread nature of the phenomena is shown by its easy duplication, using any metal electrode and any organic or inorganic thin-film insulator, or even semiconductors, since the anomalous current is usually several orders of magnitude higher than that of the nominal conductance. The typical current±voltage (I±V) curve showing NDR and a memory effect has two distinctive features. One is a local current maximum (when V = V max ), followed by a region of NDR. The other feature is the dual states for V < V max , where the ªonº state is obtained by reaching the V max first, and the ªoffº state is recovered by visiting a voltage beyond NDR before rapidly setting back to zero.[21] In addition, there are intermediate states available, [21,22] and the phenomena could be removed by exposure to oxygen gas. [13] Many models have been proposed, but so far none offers a satisfactory explanation. The arbitrary choice of metals and insulators of various energies immediately rejects any speculation related to, for example, a particular type of insulating or semiconduc...

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Comment on “Memory Effect and Negative Differential Resistance by Electrode‐Induced Two‐Dimensional Single‐Electron Tunneling in Molecular and Organic Electronic Devices”

Majumdar

Baral

Laiho³

et al. 2006

Advanced Materials

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In a recent article, Tang et al. [1] proposed a general model explaining the switching and negative differential resistance (NDR) effect observed in a multitude of different molecular and organic thin-film device configurations. Tang et al. argued that switching and NDR are general phenomena originating from nucleation of evaporated-metal nanoislands formed in crevices created in the vicinity of dust particles and/or other impurities on the bottom electrode. If these nanoislands form in a special four-sphere configuration, essentially a 2D ring structure, anomalous current-voltage characteristics are predicted. [2] In order to obtain the correct order of magnitude for the experimentally measured current density, Tang et al. argued that there have to be contributions from 10 4 independent four-ring island arrays arising at the 10 4 dust and/or impurity sites having crevices. We do acknowledge the possibility of metal-island formation in crevices around possible dust particles. However, we do not agree with this being the general solution to switching and NDR observed in many types of materials. We have performed experiments where we have observed that, upon careful evaporation of aluminum with standardized parameters, such as the evaporation rate, the distance of the mask from the electrode, and the pressure during evaporation, the effect of pinholes can be minimized and a polystyrene (PS) film between two aluminum electrodes can act as an insulator. By keeping all the evaporation parameters fixed, we have systematically introduced a small fraction of fullerenes (C60) in the PS matrix (the details of the experimental procedure have been described previously [3] ) and have obtained completely different electrical behaviors. The films made from 1 wt % of C60 in PS were as insulating as the PS-only device (Fig. 1). But, when we made a device from a solution with 5 wt % of C60 in PS, we found switching and NDR in an all-organic active layer, as clearly seen in Figure 1. However, the switching behavior has only a 40 % reproducibility between different devices and is not an additive effect, as it should be if the suggested model were correct.[1] We either observe or do not observe the effect in different cells on the same substrate. We have measured a large set of substrates and, in general, we found that four out of ten of our 5 wt % devices exhibit switching, as has also been reported for the intermediatemetal-based devices.[4]Upon increasing the amount of C60 in the devices further, the switching disappears and only a systematic NDR is observed. The reproducibility of the NDR is 100 % for all the measured devices. We have also observed switching and NDR in devices made without an evaporated top electrode, where we have used solution-cast poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) as the top electrode. This further justifies the fact that the observed switching is not only due to the metal inclusion from evaporation.We have tried to find possible proof for four-ring nanoisland arrays in our C...

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Geometrically Induced Multiple Coulomb Blockade Gaps

Cited by 28 publications

References 6 publications

Secondary Coulomb blockade gap in a four-island tunnel-junction array

Secondary Coulomb blockade gap in a four-island tunnel-junction array

Memory Effect and Negative Differential Resistance by Electrode‐ Induced Two‐Dimensional Single‐ Electron Tunneling in Molecular and Organic Electronic Devices

Comment on “Memory Effect and Negative Differential Resistance by Electrode‐Induced Two‐Dimensional Single‐Electron Tunneling in Molecular and Organic Electronic Devices”

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