Germanium diffusion and nanocrystal formation in silicon oxide on silicon substrate under rapid thermal annealing

Abstract

The effect of rapid thermal annealing temperature on the diffusion of silicon (Si) and germanium (Ge) and the formation of Ge nanocrystals in a silicon oxide matrix was investigated. The formation of Ge nanocrystals was attributed mainly to the reduction of Ge suboxides by Si diffused from the Si substrate. For samples annealed at 800°C, the nanocrystals were uniform in size and distributed evenly in the bulk of the oxide but became denser nearer to the silicon–silicon oxide (Si–SiO2) interface. When the sample was annealed at 900°C, two regions with different nanocrystal densities and size distributions separated by a region void of nanocrystals were observed. The region of denser nanocrystals was located near the Si–SiO2 interface. For annealing at 1000°C, nanocrystals were only observed at the Si–SiO2 interface and these have significant size variation, with the rest of the oxide being void of nanocrystals. The nanocrystals formed at 900 and 1000°C were generally found to be defective.

Raman and TEM studies of Ge nanocrystal formation in SiOx:Ge/SiOx multilayers

“…Structural information can be obtained by several analytical techniques such as X-ray diffraction (XRD), transmission electron microscopy (TEM) and Raman scattering spectroscopy to name a few [2,3]. Ge nanocrystals have been obtained by ion beam synthesis in SiO 2 and post growth annealing [4,5]. TEM characterization showed Ge nanocrystals with a mean diameter of few nm's depending on implantation dose and annealing time and temperature.…”

Electrical characteristics of MIS capacitors with multi-stack thermal-agglomerating Ge nanocrystals in SiO2/SiNx dielectrics

“…Memory devices employing Ge NCs instead of Si NCs would have better performance [5]. Various techniques, such as ion implantation into SiO 2 [6], co-sputtering of Ge and SiO 2 [7] and oxidation of SiGe layer [8], had been employed to fabricate Ge NCs in SiO 2 matrix.…”

Characterization of amorphous and crystalline silicon nanoclusters in ultra thin silica layers

“…Substantial research has previously been devoted to characterizing Ge nanocrystal nucleation, diffusion, and growth [31,32,33,34,35,36,37,38,39]. Ge implantation in SiO 2 layers has so far been extensively studied for their photoluminescence and structural properties.…”