Germanium Doping, Contacts, and Thin-Body Structures

Duffy, Ray; Shayesteh, Maryam

doi:10.1149/1.3700468

Cited by 10 publications

(10 citation statements)

References 70 publications

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“…For Ge-channel nFETs, gate passivation and dopant activation are challenging [8,9]. Theoretically, Ge n-FinFETs are promising: Ge's electron mobility significantly increases for the fin sidewalls as compared to the top (Fig.…”

Section: Tcad: Stress and Mobility For Group IV Finfetsmentioning

confidence: 99%

Stress simulations for optimal mobility group IV p- and nMOS FinFETs for the 14 nm node and beyond

Eneman

Brunco

Witters

et al. 2012

2012 International Electron Devices Meeting

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Calculations of stress enhanced mobilities are performed for n-and p-FinFETs with both Si and Ge channels for the 14 nm node and beyond. Relaxed Ge p-FinFETs and even Ge with a GeSn5% source / drain stressor cannot outperform strained Si. However, growing the Ge channel strained on a SiGe75% strain relaxed buffer (SRB) provides a 49% mobility boost over strained Si. For Si n-FinFETs, SRB mobility boost is also possible, with Si on a SiGe 25% SRB improving mobility by 83%. Addition of a Si:C 2% S/D stressor increases that benefit to 109%. For Ge n-FinFETs, relaxed channels outperform strained Si by 120%, owing primarily to the 6× increase in fin sidewall mobility. Adding a SiGe 75% S/D stressor increases that benefit to 210%. In general, the SRB stressors have excellent scalability to future nodes. TCAD trends are qualitatively confirmed by Nano-Beam Diffraction.

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Section: Tcad: Stress and Mobility For Group IV Finfetsmentioning

confidence: 99%

Stress simulations for optimal mobility group IV p- and nMOS FinFETs for the 14 nm node and beyond

Eneman

Brunco

Witters

et al. 2012

2012 International Electron Devices Meeting

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“…The latter leads to a deep box‐like profile, with a knee‐concentration of around 2 × 10 19 cm −3 for P, forming the boundary between intrinsic and extrinsic or enhanced diffusion at the activation temperature . An active level of 5 × 10 19 cm −3 at a junction depth x j of 50 nm corresponds with a sheet resistance R s of about 150 Ω sq −1 . Keeping the same R s , the active concentration needs to increase to a level of 2 × 10 20 cm −3 for an x j of 20 nm, required for future technology nodes.…”

Section: Introductionmentioning

confidence: 99%

“…This only translates in a lower active doping level for Ge because of the higher mobility. The active levels mentioned in the text are for Ge, based on the calculations of Duffy . The same is valid for the specific contact resistivity.…”

Section: Introductionmentioning

confidence: 99%

Defect engineering for shallow n‐type junctions in germanium: Facts and fiction

Simoen

Schaekers

Liu

et al. 2016

Physica Status Solidi (a)

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An overview is given on the status of n‐type dopant activation and diffusion in Ge, based on a standard ion implantation and annealing scheme. Emphasis is on defect engineering approaches to optimize either or both parameters. A detailed discussion is given on the use of co‐implantation by neutral or other n‐type dopants. As a case study, the impact of the C ion implantation energy and dose on n‐type junctions in p‐Ge by P + C co‐implantation will be given. It is demonstrated that for fixed P implant conditions, there exist an optimum energy and dose for achieving a minimum junction depth by the formation of C–PV complexes. An alternative approach is the use of self‐interstitial management at the end‐of‐range of the P implantation. Finally, an overview is given of alternatives for obtaining shallow, highly activated n‐type junctions in Ge. They rely on: non‐standard implantation schemes, ultra‐short annealing methods or relying on in situ doped epitaxial deposition.

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“…While Si has dominated the semiconductor industry for the last decades, alternative materials such as Ge are potential alternatives for future technologies due to their higher carrier mobilities. However, still many challenges are present in the area of Ge doping and defect annealing . Therefore, it is important to extend the available technology computer‐aided design (TCAD) models for Si and SiGe process simulations to pure Ge to support the development of Ge based devices.…”

Section: Introductionmentioning

confidence: 99%

Process simulation of dopant diffusion and activation in germanium

Zographos

Erlebach

2013

Physica Status Solidi (a)

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Germanium with its high carrier mobility is currently being investigated as an alternative material to silicon for advanced MOS devices. We have reviewed the literature on n‐type and p‐type doping of germanium and established a baseline calibration for technology process simulation. Fundamental parameters for germanium point defects have been selected and extended defect evolution has been calibrated. Models and parameters for accurate simulation of ion implantation, diffusion, and activation of the most common dopants (phosphorus and arsenic for n‐type, boron for p‐type) have been defined. We discuss the current accuracy and limitations of the process calibration and specify missing experimental data needed for enhancing and broaden the simulation capabilities for germanium processing.

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Germanium Doping, Contacts, and Thin-Body Structures

Cited by 10 publications

References 70 publications

Stress simulations for optimal mobility group IV p- and nMOS FinFETs for the 14 nm node and beyond

Stress simulations for optimal mobility group IV p- and nMOS FinFETs for the 14 nm node and beyond

Defect engineering for shallow n‐type junctions in germanium: Facts and fiction

Process simulation of dopant diffusion and activation in germanium

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