1969
DOI: 10.1088/0022-3735/2/7/314
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Germanium piezoresistive element on a flexible substrate

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Cited by 14 publications
(6 citation statements)
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“…The largest ambient temperature G found for single crystalline bulk silicon is G = 170, 3,5 and for germanium G = 100. 6 The state of the art material in the industry is poly-silicon, with G < 10, which can be improved to G 20 by using p-type poly-SiGe. 7 Recently, gauge factors of G 1000 were reported for silicon oxycarbonitride polymer-derived ceramic 5 and a G = 843 for a silicon-metal hybrid.…”
Section: Introductionmentioning
confidence: 99%
“…The largest ambient temperature G found for single crystalline bulk silicon is G = 170, 3,5 and for germanium G = 100. 6 The state of the art material in the industry is poly-silicon, with G < 10, which can be improved to G 20 by using p-type poly-SiGe. 7 Recently, gauge factors of G 1000 were reported for silicon oxycarbonitride polymer-derived ceramic 5 and a G = 843 for a silicon-metal hybrid.…”
Section: Introductionmentioning
confidence: 99%
“…The intrinsic resistance mostly initiates after the change in the band structure throughout deformation; such materials have been carried out, for example, carbon nanotubes (CNTs), [ 34 ] metal–organic framework (MOF), [ 35 ] graphene, [ 36 ] and semiconductors (Si, [ 37 ] Ge [ 38 ] ).…”
Section: Piezoresistive Pressure Sensors Based On E‐skinmentioning
confidence: 99%
“…The changes in the intrinsic resistance mainly originate from the change of the electronic band structure during deformation, which can be found in many materials such as semiconductors (Si, Ge), carbon nanotubes (CNTs), graphene, and metal‐organic framework (MOF) . Based on the hole transfer and conduction mass shift due to stress, the change in resistance of semiconductor has been widely used in mechanical sensors . The structure of the materials can significantly affect their sensing performance.…”
Section: Skin‐inspired Mechanical Sensorsmentioning
confidence: 99%