Germanium–silicon single crystal growth by the axial heat processing (AHP) technique

Dario, Aidin; Sicim, Hasan Ozgen; Balikci, Ercan

doi:10.1016/j.jcrysgro.2010.10.205

Cited by 8 publications

(6 citation statements)

References 16 publications

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“…In order to preserve diffusion from potential disturbances consequence of the melting and solidification processes, the capillary is divided in slices that can be individually moved perpendicular to their axis (shear cell technique, SC hereafter). In this way, when the diffusion process is stopped and the slices are separately cooled until they solidify, the concentration of each solidified slice enable to accurately reconstruct the final concentration profile needed (post mortem analysis) [3]. Recently, a direct procedure using X-ray radioscopic techniques (capillary technique, XR hereafter) allows in-situ instantaneous measurements of the concentration profiles by taking absorption pictures of the experiments [4 -6].…”

Section: Introductionmentioning

confidence: 99%

On the determination of diffusion coefficients in two-component alloys and doped semiconductors. Several implications concerning the International Space Station

Sánchez

Ruíz

Pujalte

et al. 2015

International Journal of Heat and Mass Transfer

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The accurate determination of interdiffusion coefficients is a technologically relevant problem that has implications on the correctness of the predictions when using the existing models of solidification. It is also important in the validation of different theories of atomic diffusion. The experimental determination of these coefficients when there is a liquid phase is difficult due to the unavoidable presence of buoyancy driven convection currents that enhance mass transport and disturb diffusion measurements. To minimize as much as possible these problems, long capillaries are used in order to confine the fluid and reduce the intensity of the convective motions. More recently, these measurements have been done in reduced gravity environments, but the residual gravity is still able to induce buoyancy driven convection motions. The aim of our work is to numerically analyze the impact of low and moderate Rayleigh number environments on the accuracy of the interdiffusion coefficient measurements using long capillaries. In the present study we deal with two liquid systems; photovoltaic silicon and Al-based liquid binary alloys at high temperature. We have numerically simulated in 3D two different experimental techniques used to determine the diffusion coefficients, this extends previous reported 2D calculations. We also consider the effect of rotating the cylindrical cell along their axis as a general stabilization mechanism of the convective motions. Finally, we use typical accelerometric signals from the International Space Station (ISS) in the quasi-steady range of frequencies. The signals concentrate on typical station reboosts because of the accelerometric level of the rest of disturbances -dockings, undockings and Extra Vehicular Activities, EVAs-is considerably lower. Keywords: Diffusion coefficients, Numerical simulation, Microgravity conditions, Melted semiconductors, Liquid metals, Shear Cell, Long Capillaries

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Section: Introductionmentioning

confidence: 99%

On the determination of diffusion coefficients in two-component alloys and doped semiconductors. Several implications concerning the International Space Station

Sánchez

Ruíz

Pujalte

et al. 2015

International Journal of Heat and Mass Transfer

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“…In this respect, a comparative study is conducted. Very initial findings of this study have already been published [23]. Two growth modes have been used, VB and AHP that has used a baffle positioned 10 mm and 5 mm above the s/l interface.…”

Section: Introductionmentioning

confidence: 99%

A comparative study on the growth of germanium–silicon single crystals grown by the vertical Bridgman and axial heat processing techniques

Dario

Sicim

Balikci

2012

Journal of Crystal Growth

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“…The flow intensity decreases with the increasing of the magnetic field strength. There are many studies that discuss the influence of either magnetic field or AHP, such as [17][18][19]. Crystal growth under the effect of crystal and crucible rotations has been regarded as another way to achieve growth control.…”

Section: Introductionmentioning

confidence: 99%

Three-dimensional numerical simulation of crystal and crucible rotations during Czochralski growth of Ge_xSi_{1-x} single crystals

Abbasoğlu¹

2012

Turkish Journal of Electrical Engineering and Computer Sciences

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The influence of crystal and crucible rotations on the flow field and the radial segregation of silicon are predicted during the growth of Ge x Si 1−x crystals by the Czochralski method under microgravity conditions. Time-dependent 3-dimensional numerical simulations are carried out to present the influence of several rotation rates on the radial segregation and flow fields during the growth of Gex Si 1−x . Thermal and solutal Marangoni convection are also considered during this study. Different crystal rotation rates varying between 0 and 30 rpm and stationary or -2 rpm crucible rotation rates are considered. The results show that the crystal and crucible rotation rates have significant influence on the flow field and radial segregation. It is clear that crystal and crucible rotations with an optimum rotation rate lead to good mixing along the growth interface and result in a crystal with a uniform concentration distribution.

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Germanium–silicon single crystal growth by the axial heat processing (AHP) technique

Cited by 8 publications

References 16 publications

On the determination of diffusion coefficients in two-component alloys and doped semiconductors. Several implications concerning the International Space Station

On the determination of diffusion coefficients in two-component alloys and doped semiconductors. Several implications concerning the International Space Station

A comparative study on the growth of germanium–silicon single crystals grown by the vertical Bridgman and axial heat processing techniques

Three-dimensional numerical simulation of crystal and crucible rotations during Czochralski growth of Ge_xSi_{1-x} single crystals

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