Germanium Surface Conditioning and Passivation

Wafer-scale detachable monocrystalline germanium nanomembranes for the growth of III–V materials and substrate reuse

“…27 The combined use of an oxidizing agent (H 2 O 2 ) and an etching agent (HF) allows etching of the substrate surface. 42 Then, we demonstrated that a high concentration of H 2 O 2 compared to HF and water resulted in an efficient surface attening with an RMS roughness of 1.3 nm (Fig. 5-d).…”

ALD on High Mobility Channels: Engineering the Proper Gate Stack Passivation

“…TXRF measurements performed after the S-treatment resulted in a coverage of 0.3ML of S with 1ML being 6.25E14at/cm 2 . Also O was detected by TXRF and the amount of O is increasing with air exposure (24). This indicates that a full removal of Ge-oxides is not achieved by this treatment and moreover, reoxidation of the Ge surface in air will take place when time elapses.…”

“…Although a reoxidation of the surface is observed, the S adsorbed on the surface remains constant as a function of time. A more detailed discussion on the (NH 4 ) 2 S treatment will be published elsewhere (24). In Figure 3, the NEXAFS spectrum at the S-K edge is shown for a Ge/S sample measured immediately after the treatment and measured after 2h of air exposure.…”

Electrical Characterization of the MOS (Metal-Oxide-Semiconductor) System: High Mobility Substrates

“…In the first part of this study, MOS devices with high mobility substrates such as Ge, In 0.53 Ga 0.47 As and InP are investigated. The sample substrates received wet treatment in diluted ammonia sulfide ((NH 4 ) 2 S) solution with details described by Sioncke et al [1] and 8 to 10 nm atomic layer deposited (ALD) Al 2 O 3 as the gate dielectric. The Al 2 O 3 dielectric layers were grown with trimethylaluminum (TMA) and water precursors at 300˚C.…”