2022
DOI: 10.3390/mi13101733
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Germanium-Tin (GeSn) Metal-Semiconductor-Metal (MSM) Near-Infrared Photodetectors

Abstract: Narrow-bandgap germanium–tin (GeSn) is employed to fabricate metal–semiconductor–metal (MSM) near-infrared photodetectors with low-dark currents and high responsivity. To reduce the dark current, the SiO2 layer is inserted in between the metal and semiconductor to increase the barrier height, albeit at the expense of photocurrent reduction. To couple more incident light into the absorption layer to enhance the responsivity, the distributed Bragg reflectors (DBRs) are deposited at the bottom of the GeSn substra… Show more

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Cited by 7 publications
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References 26 publications
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