Germanium-Vacancy Single Color Centers in Diamond

Diamond is a unique mineral widely used in diverse fields due to its remarkable properties. The development of synthesis technology made it possible to create diamond-based semiconductor devices. In addition, doped diamond can be used as single photon emitters in various luminescence applications. Different properties are the result of the presence of impurities or intrinsic defects in diamond. Thus, the investigation of the defect formation process is of particular interest. Although hydrogen, nitrogen, and boron have been known to form different point defects, the possibility for large impurity atoms to incorporate into the diamond crystal structure has been questioned for a long time. In the current paper, the paramagnetic nickel split-vacancy defect in diamond is described, and the further investigation of nickel-, cobalt-, titanium-, phosphorus-, silicon-, and germanium-related defects is discussed.

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“…Some of these centers (SiV − , GeV − ) are considered promising single-photon sources for quantum applications [64,65].…”

Section: Discussionmentioning

confidence: 99%

Incorporation of Large Impurity Atoms into the Diamond Crystal Lattice: EPR of Split-Vacancy Defects in Diamond

2017

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“…It is also important to emphasize that the Mgbased systems enable effective doping of diamond with silicon [12] and germanium [13] impurities, which create in the diamond lattice optically active silicon-vacancy and germanium-vacancy centers. These centers attract heated interest as promising single-photon emitters to be used in the emerging quantum technologies [16][17][18]. Previous studies determined the effect of temperature on diamond nucleation and growth in the Mg0.8Si0.2-C system [12].…”

Section: Diamond Crystallizationmentioning

confidence: 99%

HPHT Diamond Crystallization in the Mg-Si-C System: Effect of Mg/Si Composition

et al. 2017

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Crystallization of diamond in the Mg-Si-C system has been studied at 7.5 GPa and 1800 • C with the Mg-Si compositions spanning the range from Mg-C to Si-C end-systems. It is found that as Si content of the system increases from 0 to 2 wt %, the degree of the graphite-to-diamond conversion increases from about 50 to 100% and remains at about this level up to 20 wt % Si. A further increase in Si content of the system leads to a decrease in the graphite-to-diamond conversion degree down to complete termination of diamond synthesis at Si content >50 wt %. Depending on the Si content crystallization of diamond, joint crystallization of diamond and silicon carbide and crystallization of silicon carbide only are found to take place. The cubic growth of diamond, typical of the Mg-C system, transforms to the cube-octahedron upon adding 1 wt % Si and then to the octahedron at a Si content of 2 wt % and higher. The crystallized diamonds are studied by a suite of optical spectroscopy techniques and the major characteristics of their defect-and-impurity structure are revealed. The correlations between the Si content of the Mg-Si-C system and the properties of the produced diamond crystals are established.

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“…In recent years, a growing interest in this research field led to the discovery, investigation and fabrication of several classes of impurity-related defects [1][2][3][4][5][6][7][8].…”

Section: Main Textmentioning

confidence: 99%

Photo-physical properties of He-related color centers in diamond

Prestopino

Marinelli

Verona

et al. 2017

Applied Physics Letters

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Diamond is a promising platform for the development of technological applications in quantum optics and photonics. The quest for color centers with optimal photo-physical properties has led in recent years to the search for novel impurity-related defects in this material. Here, we report on a systematic investigation of the photo-physical properties of two He-related (HR) emission lines at 535 nm and 560 nm created in three different diamond substrates upon implantation with 1.3 MeV He + ions and subsequent annealing. The spectral features of the HR centers were studied in an "optical grade" diamond substrate as a function of several physical parameters, namely the measurement temperature, the excitation wavelength and the intensity of external electric fields. The emission lifetimes of the 535 nm and 560 nm lines were also measured by means of time-gated photoluminescence measurements, yielding characteristic decay times of (29 ± 5) ns and (106 ± 10) ns, respectively. The Stark shifting of the HR centers under the application of an external electrical field was observed in a CVD diamond film equipped with buried graphitic electrodes, suggesting a lack of inversion symmetry in the defects' structure. Furthermore, the photoluminescence mapping under 405 nm excitation of a "detector grade" diamond sample implanted at a 1×10 10 cm -2 He + ion fluence enabled to identify the spectral features of both the HR emission lines from the same localized optical spots. The reported results provide a first insight towards the understanding of the structure of He-related defects in diamond and their possible utilization in practical applications. MAIN TEXTColor centers in diamond are appealing physical systems for application in emerging quantum technologies. In recent years, a growing interest in this research field led to the discovery, investigation and fabrication of several classes of impurity-related defects [1][2][3][4][5][6][7][8].The formation of optically active defects in diamond upon He implantation followed by annealing in vacuum was recently reported [9]. The spectral features of these defects consist of two narrow emission lines at 536 nm and 560.5 nm, and a phonon sideband in the 572-630 nm spectral range. Following their initial observation in cathodoluminescence (CL) [10,11], their optical activity was investigated in both photoluminescence (PL) and electroluminescence (EL) [9,12]. The need of understanding the possible formation of stable optically active centers, whose current (and still tentative) attribution is based on He incorporation in the diamond lattice, motivates a further investigation of their opto-physical properties. More specifically, the centers have so far been attributed to the He-vacancy complex [13], and density functional theory calculations demonstrated that both this structure and the interstitial He defect could result in stable complexes in the diamond lattice [14]. Apart from this limited body of works, a systematic set of experimental results on the characterization of the ...

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Germanium-Vacancy Single Color Centers in Diamond

Cited by 305 publications

References 32 publications

Incorporation of Large Impurity Atoms into the Diamond Crystal Lattice: EPR of Split-Vacancy Defects in Diamond

Incorporation of Large Impurity Atoms into the Diamond Crystal Lattice: EPR of Split-Vacancy Defects in Diamond

HPHT Diamond Crystallization in the Mg-Si-C System: Effect of Mg/Si Composition

Photo-physical properties of He-related color centers in diamond

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