2024
DOI: 10.1038/s41598-024-57029-7
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GeSe ovonic threshold switch: the impact of functional layer thickness and device size

Jiayi Zhao,
Zihao Zhao,
Zhitang Song
et al.

Abstract: Three-dimensional phase change memory (3D PCM), possessing fast-speed, high-density and nonvolatility, has been successfully commercialized as storage class memory. A complete PCM device is composed of a memory cell and an associated ovonic threshold switch (OTS) device, which effectively resolves the leakage current issue in the crossbar array. The OTS materials are chalcogenide glasses consisting of chalcogens such as Te, Se and S as central elements, represented by GeTe6, GeSe and GeS. Among them, GeSe-base… Show more

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