GeTe/Sb4Te films: A candidate for multilevel phase change memory

Jiang, Kefeng; Lu, Yegang; Li, Zengguang; Wang, Miao; Shen, Xiang; Wang, Guoxiang; Song, Sannian; Zhang, Song

doi:10.1016/j.mseb.2018.10.002

Cited by 19 publications

(9 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[3][4] It has been proposed that the multiple stable states available in the resistive switches can be used for multilevel storage for ultrahigh density memories. 5 Existence of stable multistates has been demonstrated in resistive switching, [6][7][8][9][10][11][12][13][14] ferroelectric [15][16][17][18][19][20] and phase change [21][22][23][24][25] memory devices. Atomic point contact based QC observed in resistive switching devices has also been demonstrated for memory applications.…”

mentioning

confidence: 99%

Controlled inter-state switching between quantized conductance states in resistive devices for multilevel memory

et al. 2019

View full text Add to dashboard Cite

A detailed understanding of quantization conductance (QC), their correlation with resistive switching phenomena and controlled manipulation of quantized states is crucial for realizing atomic-scale multilevel memory elements. Here, we demonstrate highly stable and reproducible quantized conductance states (QC-states) in Al/Niobium oxide/Pt resistive switching devices. Three levels of control over the QC-states, required for multilevel quantized state memories, like, switching ON to different quantized states, switching OFF from quantized states, and controlled inter-state switching among one QC-states to another has been demonstrated by imposing limiting conditions of stop-voltage and current compliance. The well defined multiple QC-states along with a working principle for switching among various states show promise for implementation of multilevel memory devices.

show abstract

mentioning

confidence: 99%

Controlled inter-state switching between quantized conductance states in resistive devices for multilevel memory

et al. 2019

View full text Add to dashboard Cite

show abstract

“…Multilevel storage technology is expected to be an effective method for storing vast information. [1] New storage technologies such as magnetic random access memory (MRAM), resistance random access memory (RRAM), [2] and phase-change random access memory (PCRAM) with easy realization of multilevel storage are emerging. PCRAM, one of the conventional multilevel storage technologies, aims to obtain several states with different resistances, which can be achieved by applying varying electric pulses to the phase-change memory during the reset process.…”

Section: Introductionmentioning

confidence: 99%

“…The physical properties of SLL thin films vary from those of single-layer materials, including low thermal conductivity and high heterogeneous crystallization rates. [5] Multilevel storage can be realized in GeTe/Sb 4 Te, [1] GeTe/ GeSb, [6] and SbSe/ZnSb SLL thin films. [7] Other methods, such as the use of materials intrinsic to two-step resistance change, have also been exploited to achieve multilevel storage that exhibits three states.…”

Section: Introductionmentioning

confidence: 99%

Cr₇Ge₃₃Te₆₀/Hf₁₆Ge₆Sb₇₈ Superlattice‐Like Thin Film with Triple‐Phase Transitions for Multilevel Phase‐Change Memory

Hua

et al. 2021

Physica Rapid Research Ltrs

Self Cite

View full text Add to dashboard Cite

A multilevel phase-change memory cell that is based on a CrGeTe(CrGT)/ HfGeSb(HfGS) superlattice-like (SLL) structure is proposed. With increasing temperature in resistance-temperature tests, the SLL thin films exhibit a threestep phase-change process that corresponds to the crystallization of Sb, GeTe, and CrGeTe. A stable and reversible three-step phase change is identified as the key characteristic for realizing multilevel storage. This so-designed multiplecrystallization SLL structure is a feasible way to increase the storage density.

show abstract

“…The 3D XPoint technology, which is based on a 3D crossbar array structure, is proposed to be an excellent solution to the problem of storage density . In addition, the multilevel storage technology is also regarded as a potential method in massive information storage . The traditional multilevel storage technology is achieved based on different resistance states, which are obtained by applying different numbers of programming pulses to the PCRAM in the reset state.…”

Section: Introductionmentioning

confidence: 99%

“…The SLL materials have unique physical properties that single-layer materials do not possess, such as high heterogeneous crystallization rates and low thermal conductivity because of the phonon scattering at the interfaces. It has been reported that in the GeTe/Sb 4 Te, GaSb/Sb 4 Te, and GaSb/Ge 2 Te SLL films, the multilevel storage can be achieved. − …”

Section: Introductionmentioning

confidence: 99%

Designing Multiple Crystallization in Superlattice-like Phase-Change Materials for Multilevel Phase-Change Memory

Zheng

Song

Zhang

et al. 2019

ACS Appl. Mater. Interfaces

Self Cite

View full text Add to dashboard Cite

A multilevel phase-change memory device was successfully designed, which was fabricated using a Ge 40 Te 60 /Cr superlattice-like (SLL) structure. In the SLL films, a two-step phase change process is observed at elevated temperatures, which reveals the crystallization of Ge 40 Te 60 (GT) and an interface-dominated formation of Cr 2 Ge 2 Te 6 (CrGT). The bonding of Cr− Te and Ge−Ge is accompanied by the breaking of a Ge−Te bond, which is mainly in the Ge-rich GeTe 4−n Ge n units. The formation of CrGT is related to the breaking apart of the edge-sharing octahedron in GT and Cr replacement at Ge sites. The crystalline GT acts as the crystallization precursors in the formation of the CrGT phase. The stable reversible two-step phase change can guarantee the reliability of the multilevel storage. The present work may shed light on the possible mechanism of the CrGT phase transition-based interfacial dynamic process. The designed multiple crystallization system demonstrates a potential for multilevel storage.

show abstract

GeTe/Sb4Te films: A candidate for multilevel phase change memory

Cited by 19 publications

References 19 publications

Controlled inter-state switching between quantized conductance states in resistive devices for multilevel memory

Controlled inter-state switching between quantized conductance states in resistive devices for multilevel memory

Cr₇Ge₃₃Te₆₀/Hf₁₆Ge₆Sb₇₈ Superlattice‐Like Thin Film with Triple‐Phase Transitions for Multilevel Phase‐Change Memory

Designing Multiple Crystallization in Superlattice-like Phase-Change Materials for Multilevel Phase-Change Memory

Contact Info

Product

Resources

About

GeTe/Sb4Te films: A candidate for multilevel phase change memory

Cited by 19 publications

References 19 publications

Controlled inter-state switching between quantized conductance states in resistive devices for multilevel memory

Controlled inter-state switching between quantized conductance states in resistive devices for multilevel memory

Cr7Ge33Te60/Hf16Ge6Sb78 Superlattice‐Like Thin Film with Triple‐Phase Transitions for Multilevel Phase‐Change Memory

Designing Multiple Crystallization in Superlattice-like Phase-Change Materials for Multilevel Phase-Change Memory

Contact Info

Product

Resources

About

Cr₇Ge₃₃Te₆₀/Hf₁₆Ge₆Sb₇₈ Superlattice‐Like Thin Film with Triple‐Phase Transitions for Multilevel Phase‐Change Memory