2006
DOI: 10.1016/j.physb.2005.12.059
|View full text |Cite
|
Sign up to set email alerts
|

Gettering mechanism of transition metals in silicon calculated from first principles

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
6
0

Year Published

2008
2008
2019
2019

Publication Types

Select...
7

Relationship

1
6

Authors

Journals

citations
Cited by 9 publications
(6 citation statements)
references
References 10 publications
0
6
0
Order By: Relevance
“…For e-beam irradiation effects in Au NPs, phonon softening induced by positive curvature effects in the shell structure can facilitate the e-beam to activate Au atomic displacements via d 10 -to-d 9 type electronic excitations. The tetragonal d 9 systems (Cu(II) and Au(II)) with elongated bonds in z-axis direction are expected to undergo Jahn−Teller distortions [41][42][43][44]. As compared with Cu, d-orbital splitting is much more probable in Au.…”
Section: E-beam Activated Soft Modes (Ultrafast Lattice Instability)mentioning
confidence: 99%
“…For e-beam irradiation effects in Au NPs, phonon softening induced by positive curvature effects in the shell structure can facilitate the e-beam to activate Au atomic displacements via d 10 -to-d 9 type electronic excitations. The tetragonal d 9 systems (Cu(II) and Au(II)) with elongated bonds in z-axis direction are expected to undergo Jahn−Teller distortions [41][42][43][44]. As compared with Cu, d-orbital splitting is much more probable in Au.…”
Section: E-beam Activated Soft Modes (Ultrafast Lattice Instability)mentioning
confidence: 99%
“…The atom configurations and binding energy E b between Cu and complexes are shown in Fig 1. 0.04 2.10 0.69 [5], and those of O with Cu (0.16eV) [3].Furthermore, we found that the binding energy of BO complexes with Cu are higher with increasing oxygen atoms. Figure 1 shows the stable atom configuration and binding energy E b between Cu and complexes.…”
Section: Ecs Transactions 16 (6) 267-272 (2008)mentioning
confidence: 69%
“…Boron, which is used as a dopant in p-Si, forms weak copper-boron pairs with a binding energy of 0.57 eV and is responsible for partial gettering of Cu. 20,31,32 Therefore, even wafers in group A showed gettering efficiencies of as high as 46%, although no BMDs were produced in them. Wafers in group B showed significantly higher gettering efficiencies of 70-96%, depending on the BMD densities, due to BMDs generated during the two-step pretreatment.…”
Section: H914mentioning
confidence: 97%