Gettering of Iron Using Electrically Inactive Boron Doped Layer

Saito, Mami; Yamabe, Kikuo

doi:10.4028/www.scientific.net/msf.196-201.1991

Cited by 6 publications

(5 citation statements)

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“…1) gives an activation energy of about 2.2 eV. This value fits quite well to the activation energies of 2.1 eV 12 and 2.27 eV 13 obtained previously for iron gettering by electrically inactive boron and B–Si precipitates, respectively. This, together with the fact that the deactivation of boron most likely occurs by precipitation 14, implies that the high gettering efficiency of BDG observed here is due to the formation of B–Si precipitates.…”

Section: Resultssupporting

confidence: 88%

Physical mechanisms of boron diffusion gettering of iron in silicon

Vähänissi

Haarahiltunen

Talvitie

et al. 2010

Physica Rapid Research Ltrs

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We have studied the boron diffusion gettering (BDG) of iron in single crystalline silicon. The results show that iron is gettered efficiently by electrically inactive boron, which leads to gettering efficiencies comparable to phosphorus diffusion gettering (PDG). In addition we discuss the different physical mechanisms behind BDG. We also consider the possibilities of using boron diffusion gettering in solar cell fabrication and discuss the role of boron and iron concentration in the optimization of gettering efficiency. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Resultssupporting

confidence: 88%

Physical mechanisms of boron diffusion gettering of iron in silicon

Vähänissi

Haarahiltunen

Talvitie

et al. 2010

Physica Rapid Research Ltrs

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“…1) at the edge and centre of wafers, respectively. These values fit quite well to the activation energies of 2.1 eV [12] and 2.27 eV [13] obtained for iron gettering by B-Si precipitates. Thus we propose that the surprisingly high gettering effect of BDG is due to B-Si precipitates and the difference between wafer edge and centre is due to the difference in the amount of precipitated boron.…”

Section: Resultssupporting

confidence: 81%

Effect of Oxygen in Low Temperature Boron and Phosphorus Diffusion Gettering of Iron in Czochralski-Grown Silicon

Vähänissi¹,

Haarahiltunen²,

Talvitie³

et al. 2009

SSP

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Low temperature boron and phosphorous diffusion gettering (BDG and PDG) of iron in Czochralski-grown silicon were experimentally studied. Differences and similarities between the gettering techniques were clarified by using intentionally iron contaminated wafers emphasizing especially the effect of oxygen. Experiments showed that the surprisingly high gettering effects of BDG could be explained by B-Si precipitates. Oxygen precipitation was seen to decrease minority carrier diffusion length after long gettering at low temperatures in both BDG and PDG. In the case of BDG oxygen precipitation affected more as a higher thermal budget was needed to obtain similar sheet resistance to that of PDG. According to experiments the efficiency of BDG can not be concluded from the sheet resistance, whereas the efficiency of PDG can. This has practical influences in a process control environment.

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“…According to our current understanding, [ 25 ] the main gettering mechanisms associated with heavy boron doping are 1) Fermi‐level effect and the interaction of substitutional boron and Fe (FeB pairing) [ 44,61 ] and 2) the interaction of electrically inactive boron and Fe (B‐Si precipitates or BRL). [ 45,49,62,63 ]…”

Section: Resultsmentioning

confidence: 99%

“…According to our current understanding, [25] the main gettering mechanisms associated with heavy boron doping are 1) Fermilevel effect and the interaction of substitutional boron and Fe (FeB pairing) [44,61] and 2) the interaction of electrically inactive boron and Fe (B-Si precipitates or BRL). [45,49,62,63] These mechanisms will be used to investigate our B-doped poly-Si samples. The literature k seg values in Figure 6 (dashed lines) are based on the two different mechanisms: McHugo's model is based on the Fermi-level effect ((1) above) and Myers' model describes the gettering effect of B-Si precipitates ((2) above).…”

Section: Simulation Detailsmentioning

confidence: 99%

“…Figure 6A compares the experimentally measured k seg data of the B-doped poly-Si films from LPCVD in situ doping and LPCVD ion implantation, respectively, with the same active boron concentration ([B À ]) of 1 Â 10 20 cm À3 . Figure 6B exhibits the experimentally measured k seg data of the B-doped poly-Si films from LPCVD BBr 3 diffusion with a different [B À ] of 3 Â 10 20 cm À3 .According to our current understanding,[25] the main gettering mechanisms associated with heavy boron doping are 1) Fermilevel effect and the interaction of substitutional boron and Fe (FeB pairing)[44,61] and 2) the interaction of electrically inactive boron and Fe (B-Si precipitates or BRL) [45,49,62,63]. These mechanisms will be used to investigate our B-doped poly-Si samples.…”

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confidence: 94%

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Comparing the Gettering Effect of Heavily Doped Polysilicon Films and Its Implications for Tunnel Oxide‐Passivated Contact Solar Cells

et al. 2022

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In addition to excellent surface passivation and carrier selectivity, the structure based on the heavily doped polysilicon layer on an ultrathin silicon oxide interlayer also demonstrates strong impurity gettering effects. Herein, the gettering strength of a range of phosphorus‐ or boron‐doped polysilicon films from different fabrication techniques is assessed and compared. Iron, one of the most common metallic impurities in silicon, is used as a tracer impurity to quantify the gettering strength (segregation coefficient). A comparison of the experimental results to the literature, combined with measurements of the electrically active and inactive dopant concentrations, enables us to suggest the main gettering mechanisms in different polysilicon films. The differences in the segregation coefficients of the phosphorus‐doped polysilicon films for iron are within one order of magnitude, in spite of their different combinations of gettering mechanisms. On the other hand, boron‐doped polysilicon films show a large variation in their gettering effects, although the predominant gettering mechanisms are all attributed to electrically inactive boron, according to the current understanding of the gettering mechanisms from the literature. Finally, the impact of different polysilicon gettering effects on the efficiency of tunnel oxide‐passivated contact (TOPCon) cells is simulated and discussed.

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Gettering of Iron Using Electrically Inactive Boron Doped Layer

Cited by 6 publications

References 0 publications

Physical mechanisms of boron diffusion gettering of iron in silicon

Physical mechanisms of boron diffusion gettering of iron in silicon

Effect of Oxygen in Low Temperature Boron and Phosphorus Diffusion Gettering of Iron in Czochralski-Grown Silicon

Comparing the Gettering Effect of Heavily Doped Polysilicon Films and Its Implications for Tunnel Oxide‐Passivated Contact Solar Cells

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