Gettering Properties of Praseodymium in GaAs, In_0.53Ga_0.47As, and InP Grown by Liquid Phase Epitaxy

Abstract

The incorporation of prascodymiiim (Pr) into GaAs, Ino,s:,Ga,,.d.rAs, and InP during liquid-phase epitaxy were investigated by double crystal x-ray diffraction, Hall effect, low tcmperature photoluniiricscerice (PL) measnrements. The lattice mismatch slightly vary with Pr concentration in the growth mclts. Examinations of the electrical property illustrate that the lower carriers conccntrations and a higher mobilities are obtain from Pr-doped epilayers than undopcd sample (In~,.~:~Gq~.~i.As and InP). The PL spcctra (15-K) show that thc intensity of the impurity related peaks decreases and the mar-hand-to-hand luminescence intensity increase. They also reveal that the irnpuritics are gettered by Pr ions during LPE growth. Thus, for the purpose of purification, propcr amonrit of Pr in the growth melts is suggested. No intra-4f-shell transition line is observed from the Pr-doped GaAs, In,).s:{Ga,,,47As, and InP layers.

Liquid-Phase Epitaxy

“…Dolginov e al. Jiang [92] studied the gettering properties of Pr in GaAs, InGaAs, and InP LPE. Jiang [92] studied the gettering properties of Pr in GaAs, InGaAs, and InP LPE.…”

Role of Rare-Earth Elements in the Technology of III-V Semiconductors Prepared by Liquid Phase Epitaxy

“…Reports on the gettering properties of Pr are quite scarce. Pr was studied in GaAs, InGaAs, and InP by Jiang (Jiang, 1993). He correlates a linewidth narrowing of PL spectra with an improved crystalline quality due to Pr presence in the growth melt.…”