2016
DOI: 10.1380/jsssj.37.104
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Gettering Technology for CMOS Image Sensors Using a Cluster Ion Implantation

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Cited by 9 publications
(18 citation statements)
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“…In contrast, the hydrogen peak concentration decreased after epitaxial growth and after CMOS heat treatment. These were very surprising results, because it has been established that hydrogen can diffuse out to the wafer surface from the hydrogen projected range during CMOS heat treatment . Thus, most of the hydrogen atoms diffused to the silicon wafer surface.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…In contrast, the hydrogen peak concentration decreased after epitaxial growth and after CMOS heat treatment. These were very surprising results, because it has been established that hydrogen can diffuse out to the wafer surface from the hydrogen projected range during CMOS heat treatment . Thus, most of the hydrogen atoms diffused to the silicon wafer surface.…”
Section: Resultsmentioning
confidence: 99%
“…This technique can implant a silicon wafer surface simultaneously with carbon and hydrogen elements that form the projection range by using a hydrocarbon compound gas source. In our previous study , it was found that a carbon cluster ion implanted silicon wafer had three characteristics for high performance of advanced CMOS image sensors. First, a carbon cluster ion projection range has high gettering ability of metallic impurities during heat treatment .…”
Section: Introductionmentioning
confidence: 99%
“…To resolve the above technical issues, we developed an epitaxial silicon wafer in which we introduced proximity gettering sinks by a hydrocarbon molecular ion implantation technique [15,16]. Kurita and coworkers presented three unique characteristics of a hydrocarbon-molecular-ion-implanted epitaxial silicon wafer to improve the electrical device performance of CMOS image sensors [17][18][19][20][21][22]. First, the hydrocarbon-molecularion-implanted region has high gettering capability for various heavy metallic impurities [17][18][19][20][21][22][23][24][25].…”
Section: Introductionmentioning
confidence: 99%
“…Kurita and coworkers presented three unique characteristics of a hydrocarbon-molecular-ion-implanted epitaxial silicon wafer to improve the electrical device performance of CMOS image sensors [17][18][19][20][21][22]. First, the hydrocarbon-molecularion-implanted region has high gettering capability for various heavy metallic impurities [17][18][19][20][21][22][23][24][25]. The gettering technique has been widely used as a processing technique that can eliminate heavy metallic impurities diffused to the device active region during CMOS device fabrication process in semiconductor manufacturing.…”
Section: Introductionmentioning
confidence: 99%
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