GH25-10: New qualified power GaN HEMT process from technology to product overview

Floriot, D.; Brunel, V.; Camiade, M.; Chang, Christophe; Lambert, Benoît; Ouarch-Provost, Z.; Blanck, H.; Grünenpütt, Jan; Hosch, Michael; Jung, Helmut; Splettstosser, J.; Meiners, U.

doi:10.1109/eumic.2014.6997833

Cited by 29 publications

(11 citation statements)

References 2 publications

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“…Threshold voltages were ≈ −3.3 V, and peak transconductance was 0.17 Siemens (213 mS/mm). Further information on these UMS GH25-10 devices can be found in [15].…”

Section: Methodsmentioning

confidence: 99%

Neutron Irradiation Impact on AlGaN/GaN HEMT Switching Transients

Butler

Uren

Lambert

et al. 2018

IEEE Trans. Nucl. Sci.

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Current transient spectroscopy (CTS), was used to measure the impact of neutron irradiation on output currentlimiting charge traps in AlGaN/GaN HEMTs with time constants from 10 ms to 1800 s. We find that coupling between discrete traps was apparent, in contrast to the commonly employed assumption of independent trap (dis)charging, and increased after 14 MeV neutron irradiation of 2 × 10 13 n/cm 2 and above. Irradiation to a high dose of as much as 7.8 × 10 14 n/cm 2 , which is comparable to eight years exposure to a harsh radiation environment such as the ITER neutral beam injector prototype, increased trapped charge density, and reduced transient drain current to as little as 75% of its equilibrium value. These changes are consistent with displacement damage estimates based on radiation transport calculations.

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“…Threshold voltages were ≈ −3.3 V, and peak transconductance was 0.17 Siemens (213 mS/mm). Further information on these UMS GH25-10 devices can be found in [15].…”

Section: Methodsmentioning

confidence: 99%

Neutron Irradiation Impact on AlGaN/GaN HEMT Switching Transients

Butler

Uren

Lambert

et al. 2018

IEEE Trans. Nucl. Sci.

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“…The epitaxy consisted of an AlGaN barrier, GaN buffer, AlN nucleation layer and 100 µm-thick SiC substrate [6]. The gate finger cross section is illustrated schematically in Fig.…”

Section: Methodsmentioning

confidence: 99%

Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing

Pomeroy

Uren

Lambert

et al. 2015

Microelectronics Reliability

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Abstract-Channel temperature is a key parameter for accelerated life testing in GaN HEMTs. It is assumed that selfheating is similar in RF and DC operation and that DC test results can be applied to RF operation. We investigate whether this assumption is valid by using an experimentally calibrated, combined electrical and thermal model to simulate Joule heating during RF operation and compare this to DC self-heating at same power dissipation. Two cases are examined and the implications for accelerated life testing are discussed: Typical (30 V) and high (100 V) drain voltages.

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“…The studied solid-state electronic device is a GaN HEMT with a gate length of 0.25 µm and a gate width of 1.5 mm (i.e., 10 × 150 µm) (see Figure 1a). It was manufactured in the GH25-10 technology by United Monolithic Semiconductors (UMS) [30][31][32], using an AlGaN/GaN heterostructure grown on silicon carbide (SiC) substrate with a field plate for power applications. This foundry process, entitling a power density of 4.5 W/mm with typical f T of 25 GHz, is optimized for X-band (i.e., 8-12 GHz) high-power applications.…”

Section: Kink Effect In S 22mentioning

confidence: 99%

A New Study on the Temperature and Bias Dependence of the Kink Effects in S22 and h21 for the GaN HEMT Technology

et al. 2018

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The aim of this feature article is to provide a deep insight into the origin of the kink effects affecting the output reflection coefficient (S22) and the short-circuit current-gain (h21) of solid-state electronic devices. To gain a clear and comprehensive understanding of how these anomalous phenomena impact device performance, the kink effects in S22 and h21 are thoroughly analyzed over a broad range of bias and temperature conditions. The analysis is accomplished using high-frequency scattering (S-) parameters measured on a gallium-nitride (GaN) high electron-mobility transistor (HEMT). The experiments show that the kink effects might become more or less severe depending on the bias and temperature conditions. By using a GaN HEMT equivalent-circuit model, the experimental results are analyzed and interpreted in terms of the circuit elements to investigate the origin of the kink effects and their dependence on the operating condition. This empirical analysis provides valuable information, simply achievable by conventional instrumentation, that can be used not only by GaN foundries to optimize the technology processes and, as a consequence, device performance, but also by designers that need to face out with the pronounced kink effects of this amazing technology.

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GH25-10: New qualified power GaN HEMT process from technology to product overview

Cited by 29 publications

References 2 publications

Neutron Irradiation Impact on AlGaN/GaN HEMT Switching Transients

Neutron Irradiation Impact on AlGaN/GaN HEMT Switching Transients

Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing

A New Study on the Temperature and Bias Dependence of the Kink Effects in S22 and h21 for the GaN HEMT Technology

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