GHz photon-activated hopping between localized states in a silicon quantum dot

Abstract

We discuss the effects of gigahertz photon irradiation on a degenerately phosphorus-doped silicon quantum dot, in particular, the creation of voltage offsets on gate leads and the tunneling of one or two electrons via Coulomb blockade lifting at 4.2 K. A semi-analytical model is derived that explains the main features observed experimentally. Ultimately both effects may provide an efficient way to optically control and operate electrically isolated structures by microwave pulses. In quantum computing architectures, these results may lead to the use of microwave multiplexing to manipulate quantum states in a multi-qubit configuration.

Manipulation of silicon quantum dots and isolated structures using GHz photons

“…This is interpreted by both the presence of a frequency dependent voltage drop-off at the end of the gates as well as the electron tunneling between two donors separated by a tunnel barrier. Such a process is distinct from the usual photon assisted tunneling and made it possible despite thermal broadening due to fast manipulation and weak electron-phonon interaction [2]. The glass-like properties of doped silicon allows performing coherent manipulations without significant interaction with the other surrounding electrons.…”

Exploring the write-in process in molecular quantum cellular automata: a combined modeling and first-principle approach

“…However, in this implementation this behavior is only preserved at low temperatures making it therefore impractical for actual computation. Attempts have been made to find alternative systems in which the paradigm can be successfully implemented [4]. In this sense, the molecular m-QCA concept has attracted a great deal of the attention offering the possibility to achieve room temperature functionality by developing tailored molecular complexes [5][6][7][8].…”