Giant anomalous dielectric behaviour of BaSnO3 at high temperature

Muhsen, Ku Noor Dhaniah Ku; Osman, Rozana Aina Maulat; Idris, Mohd Sobri

doi:10.1007/s10854-019-01065-x

Cited by 20 publications

(12 citation statements)

References 35 publications

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“…5. It was observed that an incomplete semicircle arc at high frequency region are shown for both samples which associated with the bulk response [11,12]. This result shows that the bulk effect has dominated the electrical response of the samples.…”

Section: Resultsmentioning

confidence: 71%

Enhanced Dielectric Properties of Ba0.85Sr0.15TiO3 Ceramic by 8% Zirconium Doping

Muhsen

Nasir

Osman

et al. 2022

Advances in Science and Technology

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The dielectric properties and crystal structure of Ba0.85Sr0.15TiO3 and Ba0.85Sr0.15Ti0.92Zr0.08O3 ceramics were studied. The samples were synthesized by using solid-state method. The results show that the samples were single phase. The Ba0.85Sr0.15TiO3 exhibited tetragonal structure (space group P4mm), while with addition of 8 mol% Zr into Ba0.85Sr0.15TiO3 it shows that the sample exhibited orthorhombic structure (space group Amm2). The dielectric constant value increased from 1094 for pure, up to 4211 for Ba0.85Sr0.15Ti0.92Zr0.08O3 ceramic at Tc measured at 1 kHz. The Tc decreased from 80 °C down to 60 °C as 8 mol% Zr ions doped into Ba0.85Sr0.15TiO3 composition. The Ba0.85Sr0.15Ti0.92Zr0.08O3 ceramic exhibited lower dielectric loss, tan δ about 0.006 compared to Ba0.85Sr0.15TiO3 ceramic (tan δ = 0.009) when measured at 110 °C with frequency 1 kHz. The slope at low frequency region in capacitance vs frequency plot for both samples attributed by the grain boundary effect, whereas the high frequency plateau associated with the bulk response. The impedance spectroscopy analysis results show that both samples are dominated by the bulk response when an incomplete semicircle arc was observed in Zʺ vs Zʹ plot.

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Section: Resultsmentioning

confidence: 71%

Enhanced Dielectric Properties of Ba0.85Sr0.15TiO3 Ceramic by 8% Zirconium Doping

Muhsen

Nasir

Osman

et al. 2022

Advances in Science and Technology

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“…This frequency was chosen because it is within the frequency range at which the M–S assumption is fulfilled. The donor density ( N d ) was determined from the inverse of the linear region of the M–S curves using the following equation where e , ε 0 , ε, C , and V s , represent the electronic charge (1.6 × 10 –19 C), vacuum permittivity (8.86 × 10 –14 F cm –1 ), relative permittivity (250 for BaSnO 3 ), space-charge capacitance (F cm –2 ) in the photoanodes (obtained from the M–S curve), and the applied potential ( V ), respectively. For the capacitance value, the geometric surface area of the photoanode of 0.24 cm 2 was used.…”

Section: Methodsmentioning

confidence: 99%

Enhancing the Photon Absorption and Charge Carrier Dynamics of BaSnO₃ Photoanodes via Intrinsic and Extrinsic Defects

et al. 2022

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Barium stannate (BaSnO 3 ) crystallizes in the cubic perovskite-type structure and typically exhibits a wide band gap of >3.0 eV; thus, it is often considered unsuitable as a photo-absorber material for solar energy conversion. We present a spray-pyrolysis method for the fabrication of BaSnO 3 photoanodes, with a smaller optical gap of ∼2.2 eV. By annealing the photoanodes in 5% hydrogen sulfide (H 2 S) gas, the optical gap is further reduced to ∼1.7 eV, with an ∼20-fold increase in photocurrent density and an improved onset potential of ∼0 V RHE . To understand the reasons behind this performance enhancement, we utilize a combination of spectroscopy techniques, including photoluminescence, wavelength-dependent time-resolved surface photovoltage analysis, and photoconductivity measurements. We find that H 2 S annealing of BaSnO 3 generates a set of filled defect states associated with oxygen vacancies (V O ••), Sn 2+ centers (Sn Sn ″ ), and sulfur substitutions (S O × ), which are situated ∼1.4 to 1.9 eV below the conduction band minimum and exhibit a degree of orbital overlap with the valence band maximum. Increasing the density of these defects shifts the optical onset of photocurrent generation to ∼1.7 eV and enables holes to transport via a hopping mechanism. Resultantly, the charge carrier mobility is shown to increase by 20-fold, reaching ∼0.04 cm 2 V −1 s −1 .

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“…The measurement was taken at different temperatures from 30 °C up to 150 °C in frequency range between 10 Hz to 1 MHz. by using HIOKI IM3536 LCR Meter as described elsewhere [7,8]. The surface morphology of pellet was studied using scanning electron microscope, SEM (Hitachi SU-70, Hitachi, Ltd, Minato-ku, Japan).…”

Section: Methodsmentioning

confidence: 99%

The Structural and Dielectric Properties of BaTi0.88Zr0.12O3 Ceramic

Muhsen

Osman

Idris

et al. 2022

Advances in Science and Technology

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The BaTi0.88Zr0.12O3 ceramic has been synthesized by using a conventional solid-state reaction method and sintered at 1450 °C in air for 3 hours. The structural and dielectric properties of the sample were investigated. It was found that the sample exhibited tetragonal structure with space group P4mm. The maximum dielectric constant, εr value was obtained at Tc (70 °C) about 2800 measured at 1 kHz. The dielectric peak was broad which might be due to the pinching effect. However, maximum εr value was quite low may be attributed by the Tc and other phase transition point might be not fully coalescence. Another phase transition temperature was vaguely observed around 30 °C to 40 °C. The dielectric properties of the sample were dominated by the grain effect with capacitance values lie within range of 10-10 to 10-9. The SEM images shows that the average grain size of the sample was quite small about 2.9087 μm. It might be due to the contribution of Zr4+ with lower grain growth rate.

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Giant anomalous dielectric behaviour of BaSnO3 at high temperature

Cited by 20 publications

References 35 publications

Enhanced Dielectric Properties of Ba<sub>0.85</sub>Sr<sub>0.15</sub>TiO<sub>3</sub> Ceramic by 8% Zirconium Doping

Enhanced Dielectric Properties of Ba<sub>0.85</sub>Sr<sub>0.15</sub>TiO<sub>3</sub> Ceramic by 8% Zirconium Doping

Enhancing the Photon Absorption and Charge Carrier Dynamics of BaSnO₃ Photoanodes via Intrinsic and Extrinsic Defects

The Structural and Dielectric Properties of BaTi<sub>0.88</sub>Zr<sub>0.12</sub>O<sub>3</sub> Ceramic

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Giant anomalous dielectric behaviour of BaSnO3 at high temperature

Cited by 20 publications

References 35 publications

Enhanced Dielectric Properties of Ba<sub>0.85</sub>Sr<sub>0.15</sub>TiO<sub>3</sub> Ceramic by 8% Zirconium Doping

Enhanced Dielectric Properties of Ba<sub>0.85</sub>Sr<sub>0.15</sub>TiO<sub>3</sub> Ceramic by 8% Zirconium Doping

Enhancing the Photon Absorption and Charge Carrier Dynamics of BaSnO3 Photoanodes via Intrinsic and Extrinsic Defects

The Structural and Dielectric Properties of BaTi<sub>0.88</sub>Zr<sub>0.12</sub>O<sub>3</sub> Ceramic

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Enhancing the Photon Absorption and Charge Carrier Dynamics of BaSnO₃ Photoanodes via Intrinsic and Extrinsic Defects