Giant Dielectric‐Permittivity Phenomena of Compositionally and Structurally CaCu3Ti4O12‐Like Oxide Ceramics

Hao, Wentao; Zhang, Jialiang; Tan, Yongqiang; Su, Weizhou

doi:10.1111/j.1551-2916.2009.03298.x

Cited by 86 publications

(35 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The high frequency and low temperature response is related to semiconducting grains and that predominant at low frequencies and high temperatures is attributed to insulating grain boundaries [8][9][10][11]. In the dielectric permittivity versus frequency plots there are two plateaus -a very high reaching 10 5 at low frequencies which originates from internal barrier layer capacitance effects and a low one at a level of 200 which occurs at high frequencies and is related to intrinsic properties of the material [9].…”

Section: Resultsmentioning

confidence: 99%

“…Lead-free nonferroelectric high dielectric constant materials with perovskite structure and ACu 3 Ti 4 O 12 composition (A = Ca, Bi 2/3 , Y 2/3 , La 2/3 , Nd 2/3 , Sm 2/3 , Gd 2/3 , Dy 2/3 ) [6][7][8][9][10][11][12] could be promising candidates to replace relaxors as dielectrics in MLCCs. These compounds exhibit relatively low sintering temperature enabling co-firing with Ag electrodes.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Application of High Permittivity Bismuth Copper Titanate in Multilayer Capacitors

Szwagierczak

Kulawik

2012

Acta Phys. Pol. A

View full text Add to dashboard Cite

A nonferroelectric high permittivity compound with the perovskite structure, Bi 2/3 Cu 3 Ti 4 O 12 , was synthesized at 900• C. The ceramic powder and appropriate organic additives were used for preparation of a slurry for tape casting. The obtained green tapes were smooth, flexible, and with a uniform thickness of 25 µm after drying at 50• C. Ag electrodes were screen printed on green rectangular sheets cut by a laser. Subsequent operations were screen printing of Ag internal electrodes, stacking of green sheets, isostatic lamination, cutting, deposition of external terminations and co-firing of dielectric and conductive layers at 850• C. Scanning electron microscopy observations showed well sintered, dense, fine-grained microstructure of ceramic layers and good cooperation with the electrodes made of commercial Ag paste. Capacitance and dissipation factor of multilayer capacitors were examined in the temperature range from −55 to 330• C at frequencies 10 Hz-2 MHz. The fabricated multilayer capacitors exhibit high capacitance and relatively low temperature coefficient of capacitance in the temperature range from −55 to 110• C. The obtained lead-free high permittivity nonferroelectric material Bi 2/3 Cu 3 Ti 4 O 12 is a spontaneously formed internal barrier capacitor. This material seems to be a promising alternative for conventional lead-based relaxor dielectrics in multilayer ceramic capacitors.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Application of High Permittivity Bismuth Copper Titanate in Multilayer Capacitors

Szwagierczak

Kulawik

2012

Acta Phys. Pol. A

View full text Add to dashboard Cite

show abstract

“…Conversely, the complete ion-substitution compounds ACu 3 Ti 4 O 12 (A = Cd, Sr, La 2/3 , Y 2/3 , Bi 2/3 , Na 1/2 Bi 1/2 etc.) all exhibit the same giant dielectric constant and perovskite-like crystal structure as CaCu 3 Ti 4 O 12 with space group Im 3 [25][26][27][28][29][30]. However, Subramanian et al [1] pointed out in 2000 that the dielectric constant of CaCu 3 Ti 4 O 12 measured at 100 kHz and room temperature was more than five times larger than other kinds of ACu 3 Ti 4 O 12 compounds.…”

Section: Introductionmentioning

confidence: 96%

Giant dielectric response in Dy2/3Cu3Ti4O12 ceramics

Liu

et al. 2015

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Dy 2/3 Cu 3 Ti 4 O 12 ceramics were successfully synthesized by solid-state reaction process, and the crystal structure, microstructure and dielectric properties were systematically investigated. It has been found that Dy 2/3 Cu 3 Ti 4 O 12 ceramics exhibit giant dielectric constants (e 0 * 10 4 at 1 kHz and room temperature) and have two thermal-activated dielectric relaxations at low and high temperatures, which are quite similar to those reported in CaCu 3 Ti 4 O 12 ceramics. The low-temperature dielectric relaxation with the activation energy of 0.092 eV is supposed to be the intrinsic response originated from the defect structures of oxygen vacancy and aliovalences of Ti and Cu ions, which might make the grains semiconductive. Moreover, the heterogeneous structures especially the grain boundaries should be responsible for the high-temperature dielectric relaxation with the activation energy of 0.585 eV. The semiconducting grains and insulating grain boundaries thus play the key role as extrinsic origin for the giant dielectric response in Dy 2/3 Cu 3 Ti 4 O 12 ceramics according to the internal barrier layer capacitor (IBLC) mechanism.

show abstract

“…Besides CCTO ceramics, there are several reports on the giant ε properties of CCTO-related materials, i.e., ACu 3 Ti 4 O 12 phases where A = Sr, Cd, Bi 2/3 , La 2/3 , Y 2/3 , Na 1/2 Bi 1/2 , and the rare earths [16][17][18][19][20][21][22][23]. Hao et al [24] found that NaCu 3 Ti 3 SbO 12 , having a perovskite-related crystallographic structure, can exhibit a giant value of ε (∼10 4 below 100 kHz).…”

Section: Introductionmentioning

confidence: 99%

Electrical responses and dielectric relaxations in giant permittivity NaCu3Ti3TaO12 ceramics

et al. 2012

View full text Add to dashboard Cite

Dielectric relaxations and electrical responses in NaCu 3 Ti 3 TaO 12 ceramics were investigated as a function of temperature. NaCu 3 Ti 3 TaO 12 ceramics exhibit giant dielectric constants with values of ε ∼ 1.45-2.08 × 10 4 . Two sets of thermally activated dielectric relaxations were observed in low and high temperature ranges. Sintering conditions have an insignificant influence on the microstructure of NaCu 3 Ti 3 TaO 12 ceramics, and have a slight impact on their ε values. Thermally activated electrical responses of grains and grain boundaries have been studied at different temperatures by using complex admittance and impedance spectroscopy analyses, respectively. The low temperature relaxation mechanism is found to correlate closely with electrical response of semiconducting grains; whereas the apparent high ε values are attributed to electrical response of insulating grain boundaries. These results support the internal barrier layer capacitor model to explain the giant dielectric properties of NaCu 3 Ti 3 TaO 12 ceramics. Additionally, high temperature relaxation may be attributed to the sampleelectrode effect and/or defect ordering. N. Sangwong · W. Somphan · P. Thongbai ( ) Materials Science and Nanotechnology Program,

show abstract

Giant Dielectric‐Permittivity Phenomena of Compositionally and Structurally CaCu₃Ti₄O₁₂‐Like Oxide Ceramics

Cited by 86 publications

References 27 publications

Application of High Permittivity Bismuth Copper Titanate in Multilayer Capacitors

Application of High Permittivity Bismuth Copper Titanate in Multilayer Capacitors

Giant dielectric response in Dy2/3Cu3Ti4O12 ceramics

Electrical responses and dielectric relaxations in giant permittivity NaCu3Ti3TaO12 ceramics

Contact Info

Product

Resources

About