Giant dielectric permittivity with low loss tangent and excellent non−Ohmic properties of the (Na+, Sr2+, Y3+)Cu3Ti4O12 ceramic system

Saengvong, Pariwat; Boonlakhorn, Jakkree; Chanlek, Narong; Putasaeng, Bundit; Thongbai, Prasit

doi:10.1016/j.ceramint.2019.12.250

Cited by 11 publications

(2 citation statements)

References 37 publications

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“…This can be attributed to the fact that the ionic radii of Sr 2+ (1.16 Å) and Zr 4+ (0.72 Å) are, respectively, larger than those of Ca 2+ (1.0 Å) and Ti 4+ (0.605 Å) [33]. Accordingly, this increases the Ca-Cu and Ti-O bond lengths, which increases the lattice parameters of the materials [34].…”

Section: Phase Compositionmentioning

confidence: 99%

Sr and Zr Co-Doped CaCu3Ti4O12 Ceramics with Improved Dielectric Properties

Wang

et al. 2022

Materials

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The dielectric constant of CCTO materials can be as high as 104, which makes it suitable for use in electronic devices but the high dielectric loss limits its application. In this paper, a series of Sr and Zr co-doped CCTO ceramics having the formula Ca0.8Sr0.2Cu3Ti4−xZrxO12 (x = 0.1, 0.2, 0.3, 0.4) were obtained via a solid-state reaction technique. We force the effect of the Zr content on the phase composition, microstructure, cationic valence states, impedance, and dielectric properties of the as-prepared ceramics to reduce dielectric loss. The results demonstrate that Sr and Zr co-doping increases dielectric constant and reduces dielectric loss simultaneously, and the maximum dielectric constant (1.87 × 105, 1 Hz) and minimum dielectric loss (0.43, 102 Hz) are obtained when x = 0.3. Mixed Cu+/Cu2+ and Ti3+/Ti4+ valence states are observed to coexist in the co-doped material lattices, which promote dipole polarization, and thereby increase the dielectric constant of the ceramics. The dielectric properties of the materials are analyzed according to the internal barrier layer capacitance model, which elucidates the contributions of the grains and grain boundaries to dielectric performance. The maximum grain boundary resistance (3.7 × 105 Ω) is obtained for x = 0.3, which contributes toward the minimum dielectric loss (0.43) obtained for this ceramic at a frequency less than 1 kHz. The average grain sizes of the samples decrease with increasing Zr content, which is the primary factor increasing the grain boundary resistance of the co-doped ceramics.

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Section: Phase Compositionmentioning

confidence: 99%

Sr and Zr Co-Doped CaCu3Ti4O12 Ceramics with Improved Dielectric Properties

Wang

et al. 2022

Materials

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“…A number of models including Maxwell-Wagner relaxation, polaronic relaxation, and defect dipoles have been proposed to explain the origin of CP [4,7,[15][16][17][18][19]. Great efforts have been made to address the challenge mentioned above by means of synthesis, sintering, doping, etc [20][21][22][23]. The key to this long-lasting challenge is known to be hidden within the mechanism of CP, however, none of the proposed hypotheses are fully accepted.…”

Section: Introductionmentioning

confidence: 99%

Colossal permittivity due to electron trapping behaviors at the edge of double Schottky barrier

Wu¹,

Wang²,

Hou³

et al. 2020

J. Phys. D: Appl. Phys.

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Achieving frequency- and temperature-independent colossal permittivity (CP) with low dielectric loss is a long-standing challenge for electronic materials, in which the basic issue is understanding the underlying relaxation mechanism. In this paper, taking CaCu3Ti4O12 ceramics as an example, CP was ascribed to electron-trapping behaviors at the edge of a double Schottky barrier (DSB). On the one hand, the widely reported origins of CP, i.e. Maxwell–Wagner relaxation and polaronic relaxation, were identified as two aspects of the same bulk conductivity. This caused the insights derived from the commonly employed impedance and admittance spectra to be revisited. On the other hand, hysteresis between CP and external voltages at low temperatures, which was caused by electron filling of interface states, was predicted and experimentally confirmed. This further supported the proposal that CP arose from electron trapping at the DSB. Moreover, multiple relaxations were foreseen when more than one kind of point defect existed in the depletion layers of a DSB. The establishment of intense ‘effective’ relaxation, which was related to shallow traps, was indispensable for achieving CP, while ‘redundant’ relaxation was induced by deep-level defects, resulting in relatively high dielectric loss. Therefore, proper manipulation of the DSB and its related defect structures was crucial for achieving stable CP with sufficiently low dielectric loss.

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Preparation and dielectric properties of La doped NBCCTO ceramics

Tang

Teng

et al. 2022

J Electroceram

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Giant dielectric permittivity with low loss tangent and excellent non−Ohmic properties of the (Na+, Sr2+, Y3+)Cu3Ti4O12 ceramic system

Cited by 11 publications

References 37 publications

Sr and Zr Co-Doped CaCu3Ti4O12 Ceramics with Improved Dielectric Properties

Sr and Zr Co-Doped CaCu3Ti4O12 Ceramics with Improved Dielectric Properties

Colossal permittivity due to electron trapping behaviors at the edge of double Schottky barrier

Preparation and dielectric properties of La doped NBCCTO ceramics

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