Giant domain formation in Langmuir–Blodgett films based on Alkylammonium–Au(dmit)2 salt

Miura, Yasühiro; Hayashi, Kenichi; Kitao, Masaaki; Takagi, Makoto; Matsui, Haruki; Sugi, Michio

doi:10.1016/j.tsf.2007.04.137

Cited by 4 publications

(5 citation statements)

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“…2) In fact, our recent morphological observations by atomic force microscopy (AFM) and cross polarized microscopy have revealed that the 2C 14 -Au(dmit) 2 LB film consists of crystalline domains of several micrometers in lateral size. 21,22) In this paper, we report on a marked extension of the metallic temperature dependence of resistance of the 2C 14 -Au(dmit) 2 LB film in a case where the electrode gap is reduced from 500 to 5 mm. An extended metallic temperature dependence is seen from room temperature to 56 -106 K in a case where the electrode gap is 5 mm, while it is seen in a narrower range down to 216 K in a case where the gap is 500 mm, as reported in our previous papers.…”

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confidence: 84%

“…The details of the sample preparation are given in our previous papers. [17][18][19][20][21][22]24) The temperature dependence of the resistance of LB films was measured by an ac two-probe method (13.7 Hz) using a LakeShore Model 370 AC Resistance Bridge combined with a LakeShore Model 3716 Scanner. The resistance was measured along the film plane using an interdigitated gold electrode gap of 5 mm underneath the LB film.…”

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confidence: 99%

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Observation of Metallic Resistance Down to 56 K in Langmuir–Blodgett Films Based on Ditetradecyldimethylammonium–Au(dmit)₂ Salt

Miura¹,

Kitao²,

Matsui³

et al. 2008

jjap

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The authors' luminosity curves, trichromatic coefficients, mixture curves, complementary wave-lengths and their mixture in terms of luminosity, their hue-discrimination curves and some data on saturation discrimination have been obtained and the results tabulated. The importance, for visual research, of complete data for individual observers, rather than mean curves for different groups of observers, is emphasized.

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confidence: 84%

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confidence: 99%

Observation of Metallic Resistance Down to 56 K in Langmuir–Blodgett Films Based on Ditetradecyldimethylammonium–Au(dmit)₂ Salt

Miura¹,

Kitao²,

Matsui³

et al. 2008

jjap

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“…In fact, our atomic force microscopy observation has revealed that the 2C 14 -Au(dmit) 2 LB film consists of crystalline grains of the lateral size of several micrometers [24,25].…”

Section: Resistance Behaviormentioning

confidence: 99%

“…In our earlier stages of characterization, however, the gap distance of the electrodes for resistance measurement had been 500 µm [7], which is two orders of magnitude greater compared to the domain size [24,25]. Then, we reduced the gap distance down to 5 µm and measured the resistance of the LB films.…”

Section: Resistance Behaviormentioning

confidence: 99%

Development of Highly Conductive Langmuir-Blodgett Films

Miura

Kitao

Matsui

et al. 2012

Trans. Mat. Res. Soc. Japan

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Studies on highly conductive LB films based on ditetradecyldimethylammonium-Au(dmit) 2 [2C 14 -Au(dmit) 2 ] salt have been reviewed. The room temperature conductivity of the 2C 14 -Au(dmit) 2 LB film is as high as 40 S/cm after electro-oxidation. The resistance vs. temperature plot depends on the gap distance for the measurement. A weak metallic behavior is seen from room temperature down to 210-250 K, when the gap distance is 500 µm, while it extends down to 56-106 K, when the gap distance is 5 µm, indicating that the disorders in the film are important limiting factors for the macroscopic resistance. The data of the complex magnetic susceptibility (χ' + iχ") suggest the existence of the Meissner state below 3.9 K. Although some samples show resistance drop on cooling below 4 K, the typical resistance behaviors are of activation type at the lower temperature. We consider that disorders such as grain boundaries and/or defects are important limiting factors that should be solved to improve the electrical conduction toward the realization of global superconductivity.

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“…Deposition at non-equilibrium conditions usually result in voids [30,31] and fragmented domains [32] in the films. A rise in the surface pressure is not necessarily a result of an increase in the particle density, but rather compression among assembled NP grains and dislocations; likely resulting in a misinterpretation of the π-A curves.…”

Section: Introductionmentioning

confidence: 99%

Oscillatory barrier-assisted Langmuir–Blodgett deposition of large-scale quantum dot monolayers

Dadlani

Acharya

et al. 2016

Applied Surface Science

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Depositing continuous, large scale quantum dot films with low pinhole density is an inevitable but nontrivial step for studying their properties for applications in catalysis, electronic devices, and optoelectronics. This rising interest in high quality quantum dot films has provided research impetus to improve the deposition technique. We show that by incorporating oscillatory barriers in the commonly used Langmuir-Blodgett method, large scale monolayers of quantum dots with full coverage up to several millimeters have been achieved. With assistance of perturbation provided by the oscillatory barriers, the film has been shown to relax towards thermal equilibrium, and this physical process has been supported by molecular dynamics simulation. In

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Giant domain formation in Langmuir–Blodgett films based on Alkylammonium–Au(dmit)2 salt

Cited by 4 publications

References 5 publications

Observation of Metallic Resistance Down to 56 K in Langmuir–Blodgett Films Based on Ditetradecyldimethylammonium–Au(dmit)₂ Salt

Observation of Metallic Resistance Down to 56 K in Langmuir–Blodgett Films Based on Ditetradecyldimethylammonium–Au(dmit)₂ Salt

Development of Highly Conductive Langmuir-Blodgett Films

Oscillatory barrier-assisted Langmuir–Blodgett deposition of large-scale quantum dot monolayers

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Giant domain formation in Langmuir–Blodgett films based on Alkylammonium–Au(dmit)2 salt

Cited by 4 publications

References 5 publications

Observation of Metallic Resistance Down to 56 K in Langmuir–Blodgett Films Based on Ditetradecyldimethylammonium–Au(dmit)2 Salt

Observation of Metallic Resistance Down to 56 K in Langmuir–Blodgett Films Based on Ditetradecyldimethylammonium–Au(dmit)2 Salt

Development of Highly Conductive Langmuir-Blodgett Films

Oscillatory barrier-assisted Langmuir–Blodgett deposition of large-scale quantum dot monolayers

Contact Info

Product

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Observation of Metallic Resistance Down to 56 K in Langmuir–Blodgett Films Based on Ditetradecyldimethylammonium–Au(dmit)₂ Salt

Observation of Metallic Resistance Down to 56 K in Langmuir–Blodgett Films Based on Ditetradecyldimethylammonium–Au(dmit)₂ Salt