Giant Energy-Storage Density and Thermally Activated Phase Transition in (Pb_0.96La_0.04)(Zr_0.99Ti_0.01)O₃ Antiferroelectric Ceramics

Abstract

Antiferroelectric materials are regarded as potential energy storage materials due to their superior energy density during the antiferroelectric to ferroelectric phase transition. Nevertheless, their unsatisfactory energy density limits their application in practice. Herein, (Pb 0.96 La 0.04 )(Zr 0.99 Ti 0.01 )O 3 (PLZT) antiferroelectric ceramics are prepared via a tape-casting technique. Interestingly, the tapecasting technique can improve the ceramic microstructure, which leads to breakdown strengths ranging from 336 kV/cm for a solid state reaction to 400 kV/cm for tape-casting. A giant recoverable energy density of 11.38 J/cm 3 is realized at 395 kV/cm. Meanwhile, for PLZT ceramics, a high discharge energy density of 6.2 J/cm 3 and fast discharge speed (t 0.9 = 69 ns) are achieved simultaneously under 350 kV/cm. Furthermore, the thermally activated antiferroelectric behavior is observed in P−E loops, and a high energy density of 8.3 J/cm 3 is realized at 60 °C and 310 kV/cm. Therefore, these excellent properties demonstrate that PLZT antiferroelectric materials are a potential candidate in advanced power electronic devices.

Antiferroelectricity of NaNbO3: Single‐crystal experimental study and first‐principles calculation

“…For example, La‐substituted Pb(Zr,Ti)O 3 (PLZT) exhibits an AFE phase structure at room temperature. With increasing temperature, the AFE phase of PLZT is further stabilized and the energy storage performance is improved 10–22 . The energy storage density of PLZT increases with the zirconium content at the same temperature.…”

“…With increasing temperature, the AFE phase of PLZT is further stabilized and the energy storage performance is improved. [10][11][12][13][14][15][16][17][18][19][20][21][22] The energy storage density of PLZT increases with the zirconium content at the same temperature. Therefore, the energy storage behavior of PZT-based AFEs can be tuned by adjusting the Zr/Ti molar ratio.…”

Ultrahigh Energy Storage Capacitors Based on Freestanding Single‐Crystalline Antiferroelectric Membrane/PVDF Composites

“…Hao et al have systematically studied the energy storage performance of PbZrO 3 based AFE ceramics and films. They achieved an energy density of 11.8 J cm −3 in PbZrO 3 based ceramics [12] and 13.3 J cm −3 in pure PbZrO 3 thick film, [13] They further improved their energy storage performance by optimizing dopants (La or La/Sn doped) and composition, [13,14] using oxide electrodes, [15] and different crystallographic orientations. [16] The energy-density could increase to 56 J cm −3 at 350 MV m −1 in 1.8 μm Sr-doped PbZrO 3 AFE thick films.…”

Effects of phase transition on the dynamic discharge energy density of antiferroelectric ceramics

“…[1][2][3] In these dielectrics, antiferroelectrics (AFEs) have higher energy density and efficiency and smaller remanent polarization than ferroelectrics (FEs), so they have been more and more widely used in the past few decades, which make AFEs a promising dielectric for pulse capacitors. 4,5 Generally, the dielectric energy storage performance is calculated by P-E loops as follows 2,6,7 :…”

“…In recent years, an alternative method for calculating the energy density in the discharge process of AFEs has been proposed and widely used: AFE ceramics are charged by high-voltage power supply, and then discharged to resistive load through an RLC circuit. Therefore, the current waveform can be obtained through the oscilloscope, and the energy density W dis released during the discharge process can be calculated as 4,13 :…”