Giant enhancement in coercivity of ferromagnetic α-Fe2O3 nanosheet grown on MoS2

Debnath, Anup; Bhattacharya, Subhajit; Mondal, Tapas; Tada, Hayato; Saha, Shyamal Kumar

doi:10.1063/1.5123424

Cited by 14 publications

(8 citation statements)

References 48 publications

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“…The shifting of biding energy has occurred due to the charge-transfer from the outermost delocalized electrons of 'S' 3p to 'Co' 3d due to the mechanism of d-p mixing as described in figure 5(d) [33]. According to the existing literature, when a metal adatom or metal oxide or metal hydroxide is attached to the surface of a 2D sheet then charge-transfer occurs from electron-rich moiety to the attached metal atom [34][35][36][37]. Here, electron-transfer occurs from the electron-rich valence orbital (3p) of 'S' to partially filled 'Co' 3d-orbital.…”

Section: X-ray Photoelectron Spectroscopy and Origin Of Charge Transfermentioning

confidence: 99%

Transition from antiferromagnetic to ferromagnetic β-Co(OH)₂ with higher Curie temperature

Debnath¹,

Bhattacharya²,

Saha³

2020

J. Phys. D: Appl. Phys.

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β-Co(OH)2 intrinsically is an antiferromagnetic semiconductor with Néel temperature (TN) of ~ 11 K. On the other hand, a semiconducting ferromagnet is indeed a very important component and used as ferromagnetic contacts in spin transistors. Therefore, realization of a 2D ferromagnetic semiconductor with higher Curie temperature and coercivity is a genuine challenge. In earlier work, we have used interface interaction to achieve a transition from antiferromagnetic to ferromagnetic ordering when the antiferromagnetic Ni(OH)2, Co(OH)2 are grown on the MoS2 surface acting as a 2D template. Thus interface interaction largely depends on the thickness of both the magnetic material as well as the template material. The major limitation of the earlier work is that we could not reduce the thickness of the template (MoS2), because of the limitation in the synthesis condition. Therefore, in the present work, we have used WS2 as a 2D template, the thickness of which is reduced to about 3–4 layers. As a consequence, a large enhancement in Curie temperature (131 K), coercivity (1285 Oe) and magnetoresistance (46 %) are observed in the present sample of the ultrathin β-Co(OH)2 phase grown on a thin-layered WS2 sheet.

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Section: X-ray Photoelectron Spectroscopy and Origin Of Charge Transfermentioning

confidence: 99%

Transition from antiferromagnetic to ferromagnetic β-Co(OH)₂ with higher Curie temperature

Debnath¹,

Bhattacharya²,

Saha³

2020

J. Phys. D: Appl. Phys.

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“…The binding energies at ≈723.6 and ≈710.2 eV are attributed to Fe 3+ , while the peak of ≈532.4 eV is assigned to O 2− , consistent with the XPS result of solutionphase synthesized Fe 2 O 3 nanosheets. [43] Raman characterization is regarded as a noninvasive and fast method for determining the phase state and thickness uniformity of 2D materials, and is thus performed on transferred samples onto SiO 2 / Si (Figure 1c; Figure S3, Supporting Infomation). Four Raman characteristic peaks (indicated by the black arrows in Figure 1c) are obviously observed between ≈100 and ≈200 cm −1 , which is different from the α-Fe 2 O 3 , where no characteristic peaks are discovered within the same range, indicating the formation of ε-Fe 2 O 3 .…”

Section: Resultsmentioning

confidence: 99%

Room‐Temperature Magnetoelectric Coupling in Atomically Thin ε‐Fe₂O₃

Wang

et al. 2022

Advanced Materials

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coupling in multiferroics has attracted considerable research interests due to the wide range of applications in high-density information storages and low-energyconsumption spintronic devices. [7][8][9][10][11][12][13][14] Notably, the manipulation of magnetism by electric field has shown the transformative potential in the next-generation logic devices. [15][16][17][18][19][20][21][22][23][24] Nevertheless, the magnetoelectric coupling is extremely weak in traditional type-I multiferroics because of the mutually exclusive origins between ferroelectricity and ferromagnetism. In this context, searching for new types of multiferroics, especially at 2D community, is of great significance.Monolayer Hf 2 VC 2 F 2 was predicted to be a type-II multiferroic with a high phase transition temperature. [25] The ferroelectric polarization was induced by a unique 120° Y-type antiferromagnetic structure and was modulated by the magnetic field, nevertheless, it was difficult to achieve the electrically controlled magnetism. The sliding ferroelectricity was observed in bilayer VS 2 , [26] however, the environmental stability of atomically thin VS 2 was unsatisfactory. Ultrathin-layered CuCrS 2 and CuCrSe 2 were room-temperature multiferroics, and the ferromagnetism was stabilized by the enhanced carrier density and the vertical polarization-induced orbital shifting. [27,28] 2D multiferroics with magnetoelectric coupling combine the magnetic order and electric polarization in a single phase, providing a cornerstone for constructing high-density information storages and low-energy-consumption spintronic devices. The strong interactions between various order parameters are crucial for realizing such multifunctional applications, nevertheless, this criterion is rarely met in classical 2D materials at room-temperature. Here an ingenious space-confined chemical vapor deposition strategy is designed to synthesize atomically thin non-layered ε-Fe 2 O 3 single crystals and disclose the room-temperature long-range ferrimagnetic order. Interestingly, the strong ferroelectricity and its switching behavior are unambiguously discovered in atomically thin ε-Fe 2 O 3 , accompanied with an anomalous thicknessdependent coercive voltage. More significantly, the robust room-temperature magnetoelectric coupling is uncovered by controlling the magnetism with electric field and verifies the multiferroic feature of atomically thin ε-Fe 2 O 3 . This work not only represents a substantial leap in terms of the controllable synthesis of 2D multiferroics with robust magnetoelectric coupling, but also provides a crucial step toward the practical applications in low-energy-consumption electric-writing/magnetic-reading devices.

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“…With a rise in temperature, charge transfer is decreased due to enhanced thermal uctuation. [32][33][34]…”

Section: Schematic Model For Thermal Spin Orientation At the Interfacementioning

confidence: 99%

Interfacial negative magnetization in Ni encapsulated layer-tunable nested MoS₂ nanostructure with robust memory applications

Bhattacharya,

Ohto,

Tada

et al. 2024

Nanoscale Adv.

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Giant enhancement in coercivity of ferromagnetic α-Fe2O3 nanosheet grown on MoS2

Cited by 14 publications

References 48 publications

Transition from antiferromagnetic to ferromagnetic β-Co(OH)₂ with higher Curie temperature

Transition from antiferromagnetic to ferromagnetic β-Co(OH)₂ with higher Curie temperature

Room‐Temperature Magnetoelectric Coupling in Atomically Thin ε‐Fe₂O₃

Interfacial negative magnetization in Ni encapsulated layer-tunable nested MoS₂ nanostructure with robust memory applications

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Giant enhancement in coercivity of ferromagnetic α-Fe2O3 nanosheet grown on MoS2

Cited by 14 publications

References 48 publications

Transition from antiferromagnetic to ferromagnetic β-Co(OH)2 with higher Curie temperature

Transition from antiferromagnetic to ferromagnetic β-Co(OH)2 with higher Curie temperature

Room‐Temperature Magnetoelectric Coupling in Atomically Thin ε‐Fe2O3

Interfacial negative magnetization in Ni encapsulated layer-tunable nested MoS2 nanostructure with robust memory applications

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Transition from antiferromagnetic to ferromagnetic β-Co(OH)₂ with higher Curie temperature

Transition from antiferromagnetic to ferromagnetic β-Co(OH)₂ with higher Curie temperature

Room‐Temperature Magnetoelectric Coupling in Atomically Thin ε‐Fe₂O₃

Interfacial negative magnetization in Ni encapsulated layer-tunable nested MoS₂ nanostructure with robust memory applications