Giant gate-controlled odd-parity magnetoresistance in one-dimensional channels with a magnetic proximity effect

Abstract

According to Onsager’s principle, electrical resistance R of general conductors behaves as an even function of external magnetic field B. Only in special circumstances, which involve time reversal symmetry (TRS) broken by ferromagnetism, the odd component of R against B is observed. This unusual phenomenon, called odd-parity magnetoresistance (OMR), was hitherto subtle (< 2%) and hard to control by external means. Here, we report a giant OMR as large as 27% in edge transport channels of an InAs quantum well, which is magnetized by a proximity effect from an underlying ferromagnetic semiconductor (Ga,Fe)Sb layer. Combining experimental results and theoretical analysis using the linearized Boltzmann’s equation, we found that simultaneous breaking of both the TRS by the magnetic proximity effect (MPE) and spatial inversion symmetry (SIS) in the one-dimensional (1D) InAs edge channels is the origin of this giant OMR. We also demonstrated the ability to turn on and off the OMR using electrical gating of either TRS or SIS in the edge channels. These findings provide a deep insight into the 1D semiconducting system with a strong magnetic coupling.

Observation of large spin-polarized Fermi surface of a magnetically proximitized semiconductor quantum well

“…We estimate the electron density n from Rxy of sample B (mobility μ = 3500 cm 2 /Vs) measured at 3 T and 2 K. The Hall coefficient is always negative, which indicates that electron conduction is dominant. In our recent study of the magnetotransport properties of InAs/(Ga,Fe)Sb bilayers, we have found the new types of odd-parity MR (OMR), which behaves an odd function against B and the resistance change reaches almost 13.5% of the total resistance at 10 T 19 . Although the OMR is also observed in this study, this phenomenon is out of scope of this paper and not considered.…”

Emerging Nonlinear Photocurrents in Lead Halide Perovskites for Spintronics

“…In both processes, bulky materials of 3D would be the reason for higher spin information loss, whereas materials with lower dimensions of 1D and 2D, confined structures, heterointerfaces, or so-called low-dimensional systems with strong spin-orbit coupling (SOC) are expected to be better candidates to make spintronics work by meeting certain necessary criteria, such as high carrier mobility, high surface area, and low resistivity. Recently, large MR has been observed in a layered magnetic semiconductor [7] and a few nm thick III-V semiconductors influenced by the magnetic proximity effect [8] but at low carrier densities, which exemplify the shortcomings of magnetic semiconductors. In this context, among strong SOC low-dimensional materials, 2D materials and hybrid organic-inorganic perovskites (HOIPs) stand as the most prominent ones for spintronic devices [9].…”

Unconventional Superconducting Diode Effects via Antisymmetry and Antisymmetry Breaking

“…Odd-parity magnetotransport is a rare phenomenon, observed in exceptional cases where time reversal symmetry is broken within a few material systems. − This uncommon field-driven nonreciprocal effect is typically subtle. − A recent study highlighted a substantial odd-parity magnetoresistance in an InAs quantum well, emphasizing this intriguing effect in nonsuperconducting materials. While in superconductors, the odd-parity magnetotransport effect has been numerically explored in Josephson junctions subjected to a local inhomogeneous magnetic field, experimental demonstrations of such unconventional superconducting effect are scarce.…”