Giant magnetization on Mn₃Ga ultra-thin films grown by magnetron sputtering on SiO₂/Si(001)

Abstract

Exchange bias effect in NiMnSb/CrN heterostructures deposited by magnetron sputtering J. Appl. Phys. 113, 17D723 (2013); 10.1063/1.4798373 Nanostructured MnGa films on Si/SiO2 with 20.5 kOe room temperature coercivity J. Appl. Phys. 110, 093902 (2011); 10.1063/1.3656457 Reducing average grain and domain size in high-coercivity Co ∕ Pd perpendicular magnetic recording media through seedlayer engineering J. Appl. Phys. 97, 10N118 (2005); 10.1063/1.1855206 Effect of microstructure on the magnetic properties of L1 0 CoPt-20 at. %C magnetic thin film

Effect of Thermal Annealing on the Stoichiometry and Magnetism of Mn–Ga Thin Films

“…Besides, AFM measurements show that S3 presents a more homogeneous surface morphology with flat zones, whereas S2 presents a surface morphology with much larger granularity. These effects of the annealing time can induce the observed distinct IP- and OP- M s in agreement with ref . Qualitatively, there is no significant difference between the anisotropic magnetic behavior observed for S2 and S3 at room temperature.…”

High coercivity in Mn-Ga-Cu alloys

“…14 The D0 22 -Mn 3 Ga intermetallic compound has been prepared as film and powder. [15][16][17][18][19][20] A coercivity of 25 kOe has been attained in the D0 22 -Mn 3 Ga film, much higher than that of the L1 0 -MnGa films. Bulk materials with the D0 22 -Mn 3 Ga phase have been produced, but their reported coercivity is not yet comparable to that of the D0 22 -Mn 3 Ga film.…”

Tailoring magnetization and anisotropy of tetragonal Mn3Ga thin films by strain-induced growth and spin orbit coupling

“…The contribution of this soft FM phase can be fitted, for example, using the Brillouin function ′ J a ( , ) and then subtract it to the experimental data to evaluate the pure FiM component of the film [17]:…”

“…The growth chamber is equipped with a reflection high-energy electron diffraction (RHEED) system, from STAIB operating at 30 kV, used to control the film crystalline quality and the lattice deformation. Mn and Ga atomic flux is obtained from a homemade Mn-Ga target fabricated according to the desired composition of the films [17]. A radio-frequency (rf) power source was used to erode the target at 25 W with a corresponding deposition rate of 0.6 nm/min.…”