“…7 However, the Si-based sensors could not meet the requirements of some special circumstances involving the harsh working conditions, such as automotive engines, geothermal, deep well-drilling, and aerospace, due to its inherent defect of the narrow band gap (1.12 eV). 8 Furthermore, various other novel candidates had also been explored for improving the piezoresistive performance, including MoS 2 membranes, 9 graphene, 10 ceramics, 11 diamond-like carbon, 12 providing a great opportunity for major breakthroughs in the development of outstanding pressure sensors. Nevertheless, these candidates still suffer from poor chemical stability and low sensitivity owing to their own inherent defects, which results in limiting the device integration and application in harsh working conditions.…”